Datasheet Texas Instruments CSD19537Q3 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD19537Q3 |
100V N沟道NexFET功率MOSFET
数据表
CSD19537Q3 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 504 Kb, 修订版: A, 档案已发布: May 31, 2016
从文件中提取
状态
| CSD19537Q3 | CSD19537Q3T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| CSD19537Q3 | CSD19537Q3T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQG | DQG |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD19537 | CSD19537 |
| Width (mm) | 3.3 | 3.3 |
| Length (mm) | 3.3 | 3.3 |
| Thickness (mm) | 1 | 1 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD19537Q3 | CSD19537Q3T |
|---|---|---|
| ID, Silicon limited at Tc=25degC, A | 53 | 53 |
| IDM, Max Pulsed Drain Current(Max), A | 219 | 219 |
| Package, mm | SON3x3 | SON3x3 |
| QG Typ, nC | 16 | 16 |
| QGD Typ, nC | 2.9 | 2.9 |
| Rds(on) Max at VGS=10V, mOhms | 14.5 | 14.5 |
| VDS, V | 100 | 100 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 3.0 | 3.0 |
生态计划
| CSD19537Q3 | CSD19537Q3T | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD19537Q3 (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor