Datasheet Texas Instruments CSD19537Q3 — 数据表

制造商Texas Instruments
系列CSD19537Q3
零件号CSD19537Q3
Datasheet Texas Instruments CSD19537Q3

100V N沟道NexFET功率MOSFET 8-VSON-CLIP -55至150

数据表

CSD19537Q3 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 504 Kb, 修订版: A, 档案已发布: May 31, 2016
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityYes

打包

Pin8
Package TypeDQG
Package QTY2500
CarrierLARGE T&R
Device MarkingCSD19537
Width (mm)3.3
Length (mm)3.3
Thickness (mm)1
Mechanical Data下载

参数化

ID, Silicon limited at Tc=25degC53 A
IDM, Max Pulsed Drain Current(Max)219 A
PackageSON3x3 mm
QG Typ16 nC
QGD Typ2.9 nC
Rds(on) Max at VGS=10V14.5 mOhms
VDS100 V
VGS20 V
VGSTH Typ3.0 V

生态计划

RoHSCompliant
Pb FreeYes

应用须知

  • Ringing Reduction Techniques for NexFET High Performance MOSFETs
    PDF, 1.4 Mb, 档案已发布: Nov 16, 2011

模型线

系列: CSD19537Q3 (2)

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor