Datasheet Texas Instruments CSD19532Q5B — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD19532Q5B |
100V，4.0 mOhm，SON5x6 N沟道NexFETВ™功率MOSFET
数据表
CSD19532Q5B 100 V N-Channel NexFET Power MOSFET datasheet
PDF, 867 Kb, 修订版: B, 档案已发布: Jun 13, 2017
从文件中提取
状态
| CSD19532Q5B | CSD19532Q5BT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| CSD19532Q5B | CSD19532Q5BT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DNK | DNK |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD19532 | CSD19532 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | .95 | .95 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD19532Q5B | CSD19532Q5BT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 140 | 140 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 48 | 48 |
| QGD Typ, nC | 8.7 | 8.7 |
| Rds(on) Max at VGS=10V, mOhms | 4.9 | 4.9 |
| VDS, V | 100 | 100 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 2.6 | 2.6 |
生态计划
| CSD19532Q5B | CSD19532Q5BT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD19532Q5B (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor