Datasheet Texas Instruments CSD19532Q5BT — 数据表

制造商Texas Instruments
系列CSD19532Q5B
零件号CSD19532Q5BT
Datasheet Texas Instruments CSD19532Q5BT

100V,4.0 mOhm,SON5x6 N通道NexFET™功率MOSFET 8-VSON-CLIP -55至150

数据表

CSD19532Q5B 100 V N-Channel NexFET Power MOSFET datasheet
PDF, 867 Kb, 修订版: B, 档案已发布: Jun 13, 2017
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

打包

Pin8
Package TypeDNK
Package QTY250
CarrierSMALL T&R
Device MarkingCSD19532
Width (mm)6
Length (mm)5
Thickness (mm).95
Mechanical Data下载

参数化

ConfigurationSingle
ID, Silicon limited at Tc=25degC140 A
IDM, Max Pulsed Drain Current(Max)400 A
PackageSON5x6 mm
QG Typ48 nC
QGD Typ8.7 nC
Rds(on) Max at VGS=10V4.9 mOhms
VDS100 V
VGS20 V
VGSTH Typ2.6 V

生态计划

RoHSCompliant
Pb FreeYes

应用须知

  • Ringing Reduction Techniques for NexFET High Performance MOSFETs
    PDF, 1.4 Mb, 档案已发布: Nov 16, 2011

模型线

系列: CSD19532Q5B (2)

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor