Datasheet Vishay SI4401DDY-T1-GE3 — 数据表

Si4401DDY
Vishay Siliconix P-Channel 40 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
RDS(on) (пЃ—) ID (A)a 0.015 at VGS = -10 V -16.1 0.022 at VGS = -4.5 V -13.3 VDS (V)
-40 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC Qg (Typ.)
33 nC APPLICATIONS Load Switch POL
SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D
P-Channel MOSFET Ordering Information: Si4401DDY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 В°C, unless otherwise noted
Parameter Symbol Limit Drain-Source Voltage VDS -40 Gate-Source Voltage VGS В± 20 TC = 25 В°C
Continuous Drain Current (TJ = 150 В°C) -12.9 ID TA = 25 В°C -10.2b, c
-8.2b, c Pulsed Drain Current IDM Single Pulse Avalanche Current
Single Pulse Avalanche Energy TC = 25 В°C -5.3
-2.1b, c IAS -28 EAS 6.3 TC = 70 В°C 4 PD TA = 25 В°C W 2.5b, c
1.6b, c TA = 70 В°C
Operating Junction and Storage Temperature Range mJ 39 TC = 25 В°C
Maximum Power Dissipation A -50 IS TA = 25 В°C
L = 0.1 mH V -16.1 TC = 70 В°C
TA = 70 В°C Continous Source-Drain Diode Current Unit TJ, Tstg В°C -55 to 150 THERMAL RESISTANCE RATINGS
Parameter
b, d Maximum Junction-to-Ambient t п‚Ј 10 s Maximum Junction-to-Foot (Drain)
Steady State
Notes: …