Datasheet Vishay VN2222L — 数据表

VN0610L, VN10KLS, VN2222L
Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY
Part Number
VN0610L VN10KLS VN2222L 60 V(BR)DSS Min (V) rDS(on) Max (W)
5 @ VGS = 10 V 5 @ VGS = 10 V 7.5 @ VGS = 10 V VGS(th) (V)
0.8 to 2.5 0.8 to 2.5 0.6 to 2.5 ID (A)
0.27 0.31 0.23 FEATURES
D D D D D Zener Diode Input Protected Low On-Resistance: 3 W Ultralow Threshold: 1.2 V Low Input Capacitance: 38 pF Low Input and Output Leakage BENEFITS
D D D D D Extra ESD Protection Low Offset Voltage Low-Voltage Operation High-Speed, Easily Driven Low Error Voltage APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Battery Operated Systems D Solid-State Relays D Inductive Load Drivers TO-226AA (TO-92)
S 1 Device Marking Front View VN0610L "S" VN 0610L xxyy VN2222L "S" VN 2222L xxyy S TO-92S
Device Marking Front View VN10KLS G 2 "S" VN 10KLS xxyy "S" = Siliconix Logo xxyy = Date Code 1 G 2 D 3 D 3 Top View VN0610L VN2222L "S" = Siliconix Logo xxyy = Date Code Top View VN10KLS ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) _ Pulsed Drain Currenta Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70213 S-04279-Rev. F, 16-Jul-01 www.vishay.com TA= 25_C TA= 100_C TA= 25_C TA= 100_C Symbol
VDS VGS ID IDM PD RthJA TJ, Tstg VN2222L VN0610L
60 15/­0.3 0.27 0.17 1 0.8 0.32 156 VN10KLS
60 15/­0.3 0.31 0.20 1.0 0.9 0.4 139 Unit
V A W _C/W _C ­55 to 150 11-1 VN0610L, VN10KLS, VN2222L
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
VN0610L VN10KLS VN2222L Parameter Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Symbol Test Conditions Typa Min Max Min Max Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) VGS = 0 V, ID = 100 mA VDS = VGS, ID = 1 mA VDS = 0 V, VGS = 15 V VDS = 48 V, VGS = 0 V TJ = 125_C VDS = 10 V, VGS = 10 V VGS = 5 V, ID = 0.2 A 120 1.2 1 60 0.8 2.5 100 10 500 60 0.6 2.5 100 10 500 0.75 7.5 5 9 7.5 7.5 13.5 100 mS W mA m A V nA 1 4 3 5.6 300 0.2 0.75 Drain-Source On-Resistanceb rDS(on) VGS = 10 V, ID = 0.5 A TJ = 125_C Forward Transconductanceb Common Source Output Conductanceb gfs gos VDS = 10 V, ID = 0.5 A VDS = 7.5 V, ID = 0.05 A 100 Dynamic …