Datasheet NXP PHP79NQ08LT — 数据表

PHP79NQ08LT
N-channel TrenchMOS logic level FET
Rev. 03 -26 April 2010 Product data sheet 1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits
Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources 1.3 Applications
DC-to-DC convertors General purpose power switching Motors, lamps and solenoids Uninterruptible power supplies 1.4 Quick reference data
Table 1. Symbol VDS ID Ptot Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions Tj 25 °C; Tj 175 °C Tmb = 25 °C; VGS = 10 V Tmb = 25 °C; see Figure 2 Min Typ Max Unit 75 73 157 V A W Static characteristics RDSon VGS = 10 V; ID = 25 A; Tj = 25 °C; see Figure 9; see Figure 10 14 16 m Dynamic characteristics QGD gate-drain charge VGS = 5 V; ID = 25 A; VDS = 60 V; Tj = 25 °C; see Figure 11; see Figure 12 14 nC NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic level FET 2. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description G D S D gate drain source mounting base; connected to drain
mb
D Simplified outline Graphic symbol G
mbb076 S 1 2 3 SOT78 (TO-220AB) 3. Ordering information
Table 3. Ordering information Package Name PHP79NQ08LT TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 4. Limiting values
Table 4. Symbol VDS VDGR VGS ID Limiting values Parameter drain-source voltage drain-gate voltage gate-source voltage drain current VGS = 10 V; Tmb = 25 °C VGS = 5 V; Tmb = 100 °C; see Figure 1 VGS = 10 V; Tmb = 100 °C VGS = 5 V; Tmb = 25 °C; see Figure 1; see Figure 3 IDM Ptot Tstg Tj IS peak drain current total power dissipation storage temperature junction temperature source current Tmb = 25 °C tp 10 µs; pulsed; Tmb = 25 °C; see Figure 3 Tmb = 25 °C; see Figure 2 Conditions Tj 25 °C; Tj 175 °C Tj 175 °C; Tj 25 °C; RGS = 20 k Min -15 -55 -55 Typ Max 75 75 15 73 47 51 67 240 157 175 175 67 Unit V V V A A A A A W °C °C A In accordance with the Absolute Maximum Rating System (IEC 60134). Source-drain diode PHP79NQ08LT All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 03 -26 April 2010 2 of 13 NXP Semiconductors PHP79NQ08LT
N-channel TrenchMOS logic leve …