Datasheet Vishay IRL520 — 数据表

IRL520, SiHL520
Vishay Siliconix Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 5.0 V 12 3.0 7.1 Single
D FEATURES
100 0.27 Dynamic dV/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at VGS = 4 V and 5 V 175 °C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS Directive 2002/95/EC
Available RoHS*
COMPLIANT TO-220AB DESCRIPTION
G Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
S N-Channel MOSFET G D S The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-220AB IRL520PbF SiHL520-E3 IRL520 SiHL520 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque Currenta VGS at 5.0 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM EAS IAR EAR PD dV/dt TJ, Tstg LIMIT 100 ± 10 9.2 6.5 36 0.40 170 9.2 6.0 60 5.5 -55 to + 175 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf in N m TC = 25 °C for 10 s 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 9.2 A (see fig. 12). c. ISD 9.2 A, dI/dt 110 A/s, VDD VDS, TJ 175 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91298 S11-0518-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRL520, SiHL520
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greasd Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.50 MAX. 62 2.5 °C/W UNIT SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Thresho …