Datasheet JX3S0040120M (JX Semiconductor) - 6

JX3S0040120M Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext)
6 3
VGS=-5/+20 V VGS=-5/+ 20 V
Etotal
VDS = 800V V
5 2.5
DS = 80 0V L=100uH L=100uH RG(ext)=2 5Ω
Etotal
RG(ext)=2 .5Ω
4 2 Eon Eon 3 1.5 2 1 Eoff 1 0.5 Eoff 0 0 0 20 40 60 80 0 5 10 15 20 25
Drain to Source Current, IDS (A) External Gate Resistor RG(ext) (Ohms) Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext)
2.5 140 120 2 tr E ottal E 100 on tdoff 1.5 80 1 60 tdon 40 tf 0.5 E off 20 0 0 0 20 40 60 80 100 120 140 160 180 0 5 10 15 20 25
Junction Temperature, TJ ( C) External Gate Resistor RG(ext) (Ohms) Fig17.Transient Thermal Impedance Fig18. Safe Operating Area
1 100 0.5 1us 0.3 0.1 10 10uS 0.1 0.05 100uS 1 0.02 1ms 0.01 0.01 100ms Single Pluse 0.1 0.001 0.01 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 0.1 1 10 100 1000
Time, tp (s) Drain- Source Voltage, VDS (V)
6 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area