Datasheet JX3S0040120M (JX Semiconductor) - 5
| 制造商 | JX Semiconductor |
| 描述 | 1200V N-Channel SiC MOSFET in TO-247 package |
| 页数 / 页 | 7 / 5 — JX3S0040120M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge … |
| 文件格式/大小 | PDF / 568 Kb |
| 文件语言 | 英语 |
JX3S0040120M. Fig7.Threshold Voltage vs. Temperature. Fig8. Gate Charge Characteristics. Junction Temperature TJ ( C)
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文件文字版本
JX3S0040120M Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics
4 20 3.5 15 3 2.5 10 2 5 1.5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140
Junction Temperature TJ ( C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 0 100 90 VGS=0V -20 80 VGS=8V 70 -40 60 VGS=1 8V -60 50 40 V -80 30 GS=20V 20 -100 10 0
Drain-Source Voltage V
-120
DS (V)
0 200 400 600 800 1000 1200
Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
100000 350 300 10000 CISS 250 1000 200 100 COSS 150 100 10 CRSS 50 1 0 0 200 400 600 800 1000 1200 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area
4 20 3.5 15 3 2.5 10 2 5 1.5 1 0 0.5 0 -5 -50 -25 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140
Junction Temperature TJ ( C) Gate Charge, QG (nC) Fig9. 3rd Quadrant Characteristic at 25 C Fig10. Output Capacitor Stored Energy
-10 -8 -6 -4 -2 0 0 100 90 VGS=0V -20 80 VGS=8V 70 -40 60 VGS=1 8V -60 50 40 V -80 30 GS=20V 20 -100 10 0
Drain-Source Voltage V
-120
DS (V)
0 200 400 600 800 1000 1200
Drain to Source Voltage, VDS (V) Fig11. Capacitances vs. Drain-Source Fig12. Max Power Dissipation Derating Vs TC
100000 350 300 10000 CISS 250 1000 200 100 COSS 150 100 10 CRSS 50 1 0 0 200 400 600 800 1000 1200 -50 -25 0 25 50 75 100 125 150
Drain-Source Voltage, VDS (V) Case Temperature, TC ( C)
5 Document Outline Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig2. Output characteristics (TJ = 150 °C) Fig4. On-Resistance vs. Temperature Fig6. Body Diode Characteristic at 25 ºC Fig7.Threshold Voltage vs. Temperature Fig9. 3rd Quadrant Characteristic at 25 ºC Fig11. Capacitances vs. Drain-Source Fig8. Gate Charge Characteristics Fig10. Output Capacitor Stored Energy Fig12. Max Power Dissipation Derating Vs TC Fig13. Switching Energy vs. Drain Current Fig14. Switching Energy vs. RG(ext) Fig16. Switching Times vs. RG(ext) Fig18. Safe Operating Area