Datasheet JX3S0020120M (JX Semiconductor) - 6
| 制造商 | JX Semiconductor |
| 描述 | 1200V, 40 Ohm, Silicon Carbide MOSFET in TO-247-3L package |
| 页数 / 页 | 10 / 6 — JX3S0040R120MC. 阈值电压. 栅极电荷特性. Threshold Voltage. Gate Charge … |
| 文件格式/大小 | PDF / 813 Kb |
| 文件语言 | 英语 |
JX3S0040R120MC. 阈值电压. 栅极电荷特性. Threshold Voltage. Gate Charge Characteristics. VGS(th)=f(TJ), VGS=VDS, IDS=10mA
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文件文字版本
JX3S0040R120MC 阈值电压 栅极电荷特性 Threshold Voltage Gate Charge Characteristics VGS(th)=f(TJ), VGS=VDS, IDS=10mA VGS=f(QG), IDS=40A, IGS=50mA, VDS=800V, TJ=25 第三象限特性 第三象限特性 3rd Quadrant Characteristics 3rd Quadrant Characteristics IDS=f(VDS), TJ=25
℃
IDS=f(VDS), TJ=150
℃ Document Outline 特点 Features
℃
IDS=f(VDS), TJ=150
℃ Document Outline 特点 Features