Datasheet JX4S0040R120M (JX Semiconductor) - 2
| 制造商 | JX Semiconductor |
| 描述 | 1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET in TO-247-3 package |
| 页数 / 页 | 10 / 2 — JX4S0040R120M. 1200V, N-Channel, Silicon Carbide MOSFET. Absolute Maximum … |
| 文件格式/大小 | PDF / 608 Kb |
| 文件语言 | 英语 |
JX4S0040R120M. 1200V, N-Channel, Silicon Carbide MOSFET. Absolute Maximum Ratings (at TC=25°C unless otherwise specified)

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JX4S0040R120M 1200V, N-Channel, Silicon Carbide MOSFET Absolute Maximum Ratings (at TC=25°C unless otherwise specified) Symbol Parameter Values Unit
VDS Drain-Source Voltage 1200 V Drain Current (Continuous; TC=25oC) 60 A ID Drain Current (Continuous; TC= 100oC) 48 A I Drain Current (Pulsed) DM 100 A VGS Gate-Source Voltage -10/+22V V P Power Dissipation (T D C=25oC) 395 W T Junction and Storage Temperature Range J; Tstg -55 to +175 oC
MOSFET Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics (at TJ=25°C unless otherwise specified)
BV Drain-Source Breakdown Voltage DS 1200 - - V ID=250μA; VGS=0V IDSS Zero Gate Voltage Drain Current - - 100 μA VDS= 1200V; VGS =0V I Gate-Body Leakage Current GSS - - 250 nA VGS=-10 to 20V; VDS=0V V Gate Threshold Voltage GS(th) 2 3 4 V VDS=VGS; ID=20mA V Recommended Turn-on Voltage GS(on) - 18 - V Static V Recommended Turn-of Voltage GS(off) - -5 - - 45 52 VGS=18V; ID=20A RDS(on) Static Drain-Source on Resistance mΩ - 81 - VGS=18V; ID=20A; TJ=175oC
Dynamic characteristics (at TJ=25°C unless otherwise specified)
Ciss Input Capacitance - 2565 - Coss Output Capacitance - 109 - pF VDS= 1000V; f=1MHz; VAC=25mV Crss Reverse Transfer Capacitance - 4 - gfs Transconductance - 24 - S VDS=20V; ID=20A E Coss Stored Energy oss - 63 - μJ VDS= 1000V; f=1MHz E Turn-on Energy (Body Diode) on - 1.41 - V mJ DS=800V; VGS=-5/+18V; ID=20A; L= 150µH; RG(ext)=2.5Ω; TJ=175oC E Turn-of Energy (Body Diode) of - 1.12 - QG Total Gate Charge - 125 - QGS Gate-Source Charge - 32 - nC VDS=800V; VGS=-5/+18V; ID=20A QGD Gate-Drain Charge - 33 - RG(int) Internal Gate Resistance - 4.2 - Ω f=1MHz; VAC=25mV td(on) Turn-on Delay Time - 20 - tr Rise Time - 21 - VDS=800V; VGS=-5/+18V; ID=20A; ns RG(ext)=2.5Ω; Load=150µH td(of ) Turn-of Delay Time - 50 - tf Fal Time - 20 -
Product Data Sheet
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JX-3T04-19A-A2
Document Outline JX4S0040R120M General Description Ordering Informations JX4S0040R120M MOSFET Characteristics Thermal Characteristics Typical Performance Figure 1 Figure 3 Figure 2 Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Figure 8 Typical Performance Figure 9 Figure 11 Figure 10 Figure 12 Typical Performance Figure 13 Figure 15 Figure 14 Figure 16 Typical Performance Figure 17 Figure 18 Notes & Disclaimer Contact Info