Datasheet JX4S0040R120M (JX Semiconductor)
| 制造商 | JX Semiconductor |
| 描述 | 1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET in TO-247-3 package |
| 页数 / 页 | 10 / 1 — JX4S0040R120M. General Description. Features. Applications. Ordering … |
| 文件格式/大小 | PDF / 608 Kb |
| 文件语言 | 英语 |
JX4S0040R120M. General Description. Features. Applications. Ordering Informations. Order Number / Marking. Package Type
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JX4S0040R120M
1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET Product Data Sheet JX-3T04-19A A/2
General Description
The JX-MT3 series SiC MOSFET in TO-247-3 package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced EMI.
Features
3 rd Generation SiC MOSFET Technology High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and Simple to Drive RoHS Compliant, Halogen Free
Applications Ordering Informations
EV Charging
Order Number / Marking
JX4S0040R120M High Voltage DC/DC Converters
Package Type
TO-247-3 Switch Mode Power Supplies
Packing Method
Tube Power Factor Correction Modules
Key Parameters Symbol Parameter Values Unit Test Conditions Absolute maximum rating
V Drain-Source Voltage DS 1200 V TC=25°C I Drain Current (Continuous) D 60 A TC=25°C PD Power Dissipation 395 W TC=25OC TJ Junction Temperature 175 OC
Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics
RDS(on) Static Drain-Source on Resistance - 45 52 mΩ VGS=18V; ID=20A; TJ=25°C
Dynamic characteristics
QG Total Gate Charge - 125 - V nC DS=800V; VGS=-5/+18V; ID=20A; TJ=25°C QGD Gate-Drain Charge - 33 -
Source-drain diode
Qrr Reverse Recovery Charge - 32 - nC VGS=0V; IF=20A; VR=800V; di/dt=900A/μs; TJ=175°C
Product Data Sheet
1
JX-3T04-19A-A2
Document Outline JX4S0040R120M General Description Ordering Informations JX4S0040R120M MOSFET Characteristics Thermal Characteristics Typical Performance Figure 1 Figure 3 Figure 2 Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Figure 8 Typical Performance Figure 9 Figure 11 Figure 10 Figure 12 Typical Performance Figure 13 Figure 15 Figure 14 Figure 16 Typical Performance Figure 17 Figure 18 Notes & Disclaimer Contact Info
1200V, 60A, 45mΩ , N-Channel, Silicon Carbide MOSFET Product Data Sheet JX-3T04-19A A/2
General Description
The JX-MT3 series SiC MOSFET in TO-247-3 package ensures stable high-temperature operation for power-dense and energy-critical systems, enabling compact designs with reduced EMI.
Features
3 rd Generation SiC MOSFET Technology High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to paral el and Simple to Drive RoHS Compliant, Halogen Free
Applications Ordering Informations
EV Charging
Order Number / Marking
JX4S0040R120M High Voltage DC/DC Converters
Package Type
TO-247-3 Switch Mode Power Supplies
Packing Method
Tube Power Factor Correction Modules
Key Parameters Symbol Parameter Values Unit Test Conditions Absolute maximum rating
V Drain-Source Voltage DS 1200 V TC=25°C I Drain Current (Continuous) D 60 A TC=25°C PD Power Dissipation 395 W TC=25OC TJ Junction Temperature 175 OC
Symbol Parameter Min. Typ. Max. Unit Test Conditions Static characteristics
RDS(on) Static Drain-Source on Resistance - 45 52 mΩ VGS=18V; ID=20A; TJ=25°C
Dynamic characteristics
QG Total Gate Charge - 125 - V nC DS=800V; VGS=-5/+18V; ID=20A; TJ=25°C QGD Gate-Drain Charge - 33 -
Source-drain diode
Qrr Reverse Recovery Charge - 32 - nC VGS=0V; IF=20A; VR=800V; di/dt=900A/μs; TJ=175°C
Product Data Sheet
1
JX-3T04-19A-A2
Document Outline JX4S0040R120M General Description Ordering Informations JX4S0040R120M MOSFET Characteristics Thermal Characteristics Typical Performance Figure 1 Figure 3 Figure 2 Figure 4 Typical Performance Figure 5 Figure 7 Figure 6 Figure 8 Typical Performance Figure 9 Figure 11 Figure 10 Figure 12 Typical Performance Figure 13 Figure 15 Figure 14 Figure 16 Typical Performance Figure 17 Figure 18 Notes & Disclaimer Contact Info