Datasheet JX3S0070R170M (JX Semiconductor) - 4

JX3S0070R1700M 1700V, N.Channel, Silicon Carbide MOSFET Typical Performance
80 80 VGS =20V VGS =18V VGS=20V VGS=18V 60 60 VGS=16V
) ) (A
VGS =16V
(A S ID S ID urrent,
40 40
C urrent, C
V V GS =14V GS =14V
-Source -Source rain D
20
rain
20
D
VGS =12V VGS =12V 0 0 0 3 6 9 12 15 0 3 6 9 12 15
Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V) Figure 1 Figure 2
Output Characteristics (TJ=25°C) Output Characteristics (TJ=175°C) 2 160 1.8 140 1.6 120 1.4
s) hm O
1.2
(m
100
)
V
n
GS= 15V
(o
1
S RD
80 VGS= 18V 0.8
ce,
60 VGS= 20V 0.6
esistan R n O
40 0.4 0.2 20 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ (°C) Junction Temperature, TJ (°C) Figure 3 Figure 4
Normalized On-Resistance vs. Temperature On-Resistance vs. Temperature
Product Data Sheet
4
JXC.3T04.40AA/2
Document Outline JX3S0070R170M Thermal Characteristics Typical Performance Figure 1 Figure 3 Normalized On-Resistance vs. Temperature Figure 2 Figure 4 Typical Performance Figure 5 Figure 6 Body Diode Characteristic at 25°C Figure 7 Figure 8 Typical Performance Figure 9 Figure 10 Figure 11 Figure 12 Typical Performance Figure 13 Figure 14 Figure 15 Figure 16 Typical Performance Figure 17 Figure 18 Contact Info