Datasheet JX4S0150R330M (JX Semiconductor) - 2

JX4S0150R330M Absolute Maximum Ratings(Tc=25 ) Symbol Parameter Value Unit
VDS Drain-Source Voltage 3300 V ID Drain Current(continuous)at Tc=25℃ 35 A ID Drain Current(continuous)at Tc=100℃ 20 A IDM Drain Current (pulsed) 96 A VGS Gate-Source Voltage -10/+25 V PD Power Dissipation TC = 25°C 357 W TJ, Tstg Junction and Storage Temperature Range -55 to +175 ℃
Electrical Characteristics(TJ = 25 unless otherwise specified) Typical Performance-Static Symbol Parameter Test Conditions Min. Typ. Max. Unit
BVDS Drain-source Breakdown Voltage ID=250uA,VGS=0V 3300 V VDS =3300V, VGS =0V, IDSS Zero Gate Voltage Drain Current 100 μA TJ=25。C VDS =0 V ; IGSS Gate-body Leakage Current 10 250 nA VGS =-10 to 25V VGS(th) Gate Threshold Voltage VDS= VGS, ID=5mA 2 3.2 4 V VGSon Recommended turn-on Voltage 20 V Static VGSoff Recommended turn-of Voltage -5 V VGS=20V, ID=15A 150 180 mΩ RDS(on) Static Drain-source On Resistance VGS=20V,ID=15A 258 mΩ TJ=175°C 2 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance