Datasheet JX4S0150R330M (JX Semiconductor) - 4

JX4S0150R330M Electrical Characteristics Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C)
30 30 VGS=20V V 8V 25 GS=1 25 VGS =16V VGS=20V 20 20 VGS=18V VGS=14V VGS=14V V 15 GS=16V 15 VGS=1 2V 10 VGS=12V 10 5 5 0 0 0 1 2 3 4 5 6
Drain-Source Voltage, V
0 1 2 3 4 5 6
DS (V) Drain-Source Voltage, VDS (V) Fig3.Normalized On-Resistance vs. Temperature Fig4. On-Resistance vs. Temperature
2 350 1.8 300 1.6 1.4 250 1.2 VGS=16V 200 1 VGS=20V 0.8 150 0.6 100 0.4 0.2 50 0 0 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
Junction Temperature, TJ( C) Junction Temperature, TJ( C) Fig5. Transfer Characteristic Fig6. Body Diode Characteristic at 25 C
30 0 VGS=0V 25 TJ=175 VGS=-5V 20 -5 ℃ VGS=-3V 15 TJ=25℃ 10 -10 5 0 -15 0 4 8 12 16 -6 -4 -2 0
Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
4 Document Outline Fig1. Output characteristics (TJ = 25 °C) Fig2. Output characteristics (TJ = 175 °C) Fig3.Normalized On-Resistance vs. Temperature Fig5. Transfer Characteristic Fig7.Threshold Voltage vs. Temperature Fig8. Gate Charge Characteristics Fig9. 3rd Quadrant Characteristic at 25 oC Fig11. Capacitances vs. Drain-Source Fig13. Switching Energy vs. Drain Current Fig15. Switching Energy vs. Temperature Fig16. Switching Times vs. RG(ext) Fig17.Transient Thermal Impedance