Datasheet IRFP450N (Vishay) - 5
| 制造商 | Vishay |
| 描述 | Power MOSFET in TO-247 package |
| 页数 / 页 | 8 / 5 — IRFP450N, SiHFP450N. Fig. 10a - Switching Time Test Circuit. Fig. 9 - … |
| 文件格式/大小 | PDF / 187 Kb |
| 文件语言 | 英语 |
IRFP450N, SiHFP450N. Fig. 10a - Switching Time Test Circuit. Fig. 9 - Maximum Drain Current vs. Case Temperature
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文件文字版本
IRFP450N, SiHFP450N
Vishay Siliconix RD VDS 14 VGS D.U.T. 12 RG + - VDD 10 10 V Pulse width ≤ 1 µs 8 Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
6 VDS I , Drain Current (A) D 4 90 % 2 0 10 % 25 50 75 100 125 150 VGS T , Case Temperature ( C ° ) C t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
1 D = 0.50 ) thJC (Z 0.20 0.1 sponse e 0.10 R PDM al 0.05 m t1 0.02 SINGLE PULSE t2 Ther (THERMAL RESPONSE) 0.01 Notes: 1. Duty factor D = t / t 1 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 5 Document Outline Datasheet Disclaimer
Vishay Siliconix RD VDS 14 VGS D.U.T. 12 RG + - VDD 10 10 V Pulse width ≤ 1 µs 8 Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
6 VDS I , Drain Current (A) D 4 90 % 2 0 10 % 25 50 75 100 125 150 VGS T , Case Temperature ( C ° ) C t t t t d(on) r d(off) f
Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms
1 D = 0.50 ) thJC (Z 0.20 0.1 sponse e 0.10 R PDM al 0.05 m t1 0.02 SINGLE PULSE t2 Ther (THERMAL RESPONSE) 0.01 Notes: 1. Duty factor D = t / t 1 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t , Rectangular Pulse Duration (sec) 1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 5 Document Outline Datasheet Disclaimer