Datasheet IRFP450N (Vishay)
| 制造商 | Vishay |
| 描述 | Power MOSFET in TO-247 package |
| 页数 / 页 | 8 / 1 — IRFP450N, SiHFP450N. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS. … |
| 文件格式/大小 | PDF / 187 Kb |
| 文件语言 | 英语 |
IRFP450N, SiHFP450N. Power MOSFET. FEATURES. PRODUCT SUMMARY. RoHS. COMPLIANT. APPLICATIONS. TO-247. TYPICAL SMPS TOPOLOGIES
该数据表的模型线
文件文字版本
IRFP450N, SiHFP450N
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement R
RoHS
DS(on) (Max.) (Ω) VGS = 10 V 0.37 • Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Q Ruggedness g (Max.) (nC) 77 • Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 • Effective Coss Specified Configuration Single • Lead (Pb)-free D
APPLICATIONS TO-247
• Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G • High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
S D • Two Transistor Forward S G • Half Bridge and Full Bridge N-Channel MOSFET • PFC Boost
ORDERING INFORMATION
Package TO-247 IRFP450NPbF Lead (Pb)-free SiHFP450N-E3 IRFP450N SnPb SiHFP450N
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 14 Continuous Drain Current VGS at 10 V ID TC = 100 °C 8.8 A Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.6 W/°C Single Pulse Avalanche Energyb EAS 170 mJ Repetitive Avalanche Currenta IAR 14 A Repetitive Avalanche Energya EAR 20 mJ Maximum Power Dissipation TC = 25 °C PD 200 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 1 Document Outline Datasheet Disclaimer
Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement R
RoHS
DS(on) (Max.) (Ω) VGS = 10 V 0.37 • Improved Gate, Avalanche and Dynamic dV/dt
COMPLIANT
Q Ruggedness g (Max.) (nC) 77 • Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 • Effective Coss Specified Configuration Single • Lead (Pb)-free D
APPLICATIONS TO-247
• Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply G • High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
S D • Two Transistor Forward S G • Half Bridge and Full Bridge N-Channel MOSFET • PFC Boost
ORDERING INFORMATION
Package TO-247 IRFP450NPbF Lead (Pb)-free SiHFP450N-E3 IRFP450N SnPb SiHFP450N
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 14 Continuous Drain Current VGS at 10 V ID TC = 100 °C 8.8 A Pulsed Drain Currenta IDM 56 Linear Derating Factor 1.6 W/°C Single Pulse Avalanche Energyb EAS 170 mJ Repetitive Avalanche Currenta IAR 14 A Repetitive Avalanche Energya EAR 20 mJ Maximum Power Dissipation TC = 25 °C PD 200 W Peak Diode Recovery dV/dtc dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d 10 lbf · in Mounting Torque 6-32 or M3 screw 1.1 N · m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1.7 mH, RG = 25 Ω, IAS = 14 A (see fig. 12). c. ISD ≤ 14 A, dI/dt ≤ 510 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. Document Number: 91232 www.vishay.com S-Pending-Rev. b, 26-Jun-08 1 Document Outline Datasheet Disclaimer