Datasheet IRFD9020 (Vishay) - 4
| 制造商 | Vishay |
| 描述 | P-Channel Power MOSFET |
| 页数 / 页 | 9 / 4 — IRFD9020. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage. Fig. … |
| 文件格式/大小 | PDF / 266 Kb |
| 文件语言 | 英语 |
IRFD9020. Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage. Fig. 7 - Typical Source-Drain Diode Forward Voltage
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IRFD9020
www.vishay.com Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C TJ = 150 °C SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
S16-1506-Rev. D, 01-Aug-16
4
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage
TA = 25 °C TJ = 150 °C SINGLE PULSE
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area
S16-1506-Rev. D, 01-Aug-16
4
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000