Datasheet IRFD9020 (Vishay)
| 制造商 | Vishay |
| 描述 | P-Channel Power MOSFET |
| 页数 / 页 | 9 / 1 — IRFD9020. Power MOSFET. FEATURES. PRODUCT SUMMARY. HVMDIP. DESCRIPTION. … |
| 文件格式/大小 | PDF / 266 Kb |
| 文件语言 | 英语 |
IRFD9020. Power MOSFET. FEATURES. PRODUCT SUMMARY. HVMDIP. DESCRIPTION. ORDERING INFORMATION. ABSOLUTE MAXIMUM RATINGS
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文件文字版本
IRFD9020
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt rating VDS (V) -60 • Repetitive avalanche rated RDS(on) () VGS = -10 V 0.28 • For automatic insertion Qg max. (nC) 19 • End stackable Qgs (nC) 5.4 Q • P-channel gd (nC) 11 Configuration Single • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance S please see www.vishay.com/doc?99912
HVMDIP DESCRIPTION
G Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and cost G effectiveness. D D The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on P-Channel MOSFET standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP Lead (Pb)-Free IRFD9020PbF
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ± 20 TA = 25 °C -1.6 Continuous Drain Current VGS at -10 V ID TA = 100 °C -1.1 A Pulsed Drain Current a IDM -13 Linear Derating Factor 0.0083 W/°C Single Pulse Avalanche Energy b EAS 140 mJ Repetitive Avalanche Current a IAR -1.6 A Repetitive Avalanche Energy a EAR 0.13 mJ Maximum Power Dissipation TA = 25 °C PD 1.3 W Peak Diode Recovery dV/dt c dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C Soldering Recommendations (Peak temperature) d For 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 , IAS = -3.2 A (see fig. 12). c. ISD -11 A, dI/dt -140 A/ms, VDD VDS, TJ 175 °C. d. 1.6 mm from case. S16-1506-Rev. D, 01-Aug-16
1
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Power MOSFET FEATURES PRODUCT SUMMARY
• Dynamic dV/dt rating VDS (V) -60 • Repetitive avalanche rated RDS(on) () VGS = -10 V 0.28 • For automatic insertion Qg max. (nC) 19 • End stackable Qgs (nC) 5.4 Q • P-channel gd (nC) 11 Configuration Single • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance S please see www.vishay.com/doc?99912
HVMDIP DESCRIPTION
G Third generation power MOSFETs from Vishay provides the designer with the best combination of fast switching, S ruggedized device design, low on-resistance and cost G effectiveness. D D The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on P-Channel MOSFET standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
ORDERING INFORMATION
Package HVMDIP Lead (Pb)-Free IRFD9020PbF
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ± 20 TA = 25 °C -1.6 Continuous Drain Current VGS at -10 V ID TA = 100 °C -1.1 A Pulsed Drain Current a IDM -13 Linear Derating Factor 0.0083 W/°C Single Pulse Avalanche Energy b EAS 140 mJ Repetitive Avalanche Current a IAR -1.6 A Repetitive Avalanche Energy a EAR 0.13 mJ Maximum Power Dissipation TA = 25 °C PD 1.3 W Peak Diode Recovery dV/dt c dV/dt -4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg -55 to +175 °C Soldering Recommendations (Peak temperature) d For 10 s 300
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = -25 V, starting TJ = 25 °C, L = 15 mH, Rg = 25 , IAS = -3.2 A (see fig. 12). c. ISD -11 A, dI/dt -140 A/ms, VDD VDS, TJ 175 °C. d. 1.6 mm from case. S16-1506-Rev. D, 01-Aug-16
1
Document Number: 90170 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000