Datasheet IRFD024 (Vishay) - 5
| 制造商 | Vishay |
| 描述 | N-Channel Power MOSFET |
| 页数 / 页 | 9 / 5 — IRFD024. Fig. 10a - Switching Time Test Circuit. Fig. 7 - Maximum Drain … |
| 文件格式/大小 | PDF / 425 Kb |
| 文件语言 | 英语 |
IRFD024. Fig. 10a - Switching Time Test Circuit. Fig. 7 - Maximum Drain Current vs. Ambient Temperature
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IRFD024
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V ent (A) Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
, Drain Curr I D VDS 90 % 10 % TA, Ambient Temperature (°C) VGS t t t t d(on) r d(off) f
Fig. 7 - Maximum Drain Current vs. Ambient Temperature Fig. 10b - Switching Time Waveforms
) thJA e (Z s pon s Thermal Re t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
S21-0885-Rev. D, 30-Aug-2021
5
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix RD VDS VGS D.U.T. Rg + - VDD 10 V ent (A) Pulse width ≤ 1 µs Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
, Drain Curr I D VDS 90 % 10 % TA, Ambient Temperature (°C) VGS t t t t d(on) r d(off) f
Fig. 7 - Maximum Drain Current vs. Ambient Temperature Fig. 10b - Switching Time Waveforms
) thJA e (Z s pon s Thermal Re t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
S21-0885-Rev. D, 30-Aug-2021
5
Document Number: 91126 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000