Datasheet VS-HOT200C080 (Vishay) - 4

VS-HOT200C080
www.vishay.com Vishay Semiconductors Axis Title Axis Title 1.2 10000 10000 V = 0 V 100 GS r 1 ltiplie 10 u T = 175 °C 0.8 1000 J 1000 M n T = 150 °C J ine tio ne ne ) 1 ine ne ne 0.6 (A T = 125 °C J 2nd l 1st li I S 2nd li 1st li 2nd l 2nd li r Dissipa 0.1 0.4 100 e 100 Pow 0.2 0.01 T = 25 °C T = - 40 °C J J 0 10 0.001 10 0 25 50 75 100 125 150 175 200 0 0.2 0.4 0.6 0.8 1.0 T (°C) V (V) C SD Fig. 1 - Normalized Power Dissipation Fig. 4 - Typical Body Diode Source-to-Drain Current Characteristics Axis Title Axis Title 180 10000 450 10000 V = 10 V, GS 160 V = 15 V Top R = 0.77 C°/W 400 GS thJC V = 13 V GS (°C) 140 V = 10 V 350 GS V = 9 V GS 120 1000 300 V = 8 V GS 1000 erature V = 7 V Bottom p DC GS m 100 ne ne ) 250 ine ne e ine ne T (A 80 1st li I D 200 V = 6 V 2nd l 2nd li GS 1st li 2nd l 2nd li 60 100 e Case 150 100 V = 5 V bl GS a 40 w 100 llo A 20 50 0 10 0 10 0 50 100 150 200 250 0 0.5 1 1.5 2 2.5 3 I - Continuous Drain Current (A) V (V) D DS Fig. 2 - Maximum Continuous Drain Current vs. Case Temperature Fig. 5 - Typical Drain to Source Current Output Characteristics at TJ = -40 °C Axis Title Axis Title 300 10000 500 10000 V = 15 V Top 450 GS V = 13 V 250 GS 400 V = 10 V GS V = 9 V GS T = 175 °C 350 V = 8 V 200 J 1000 GS 1000 V = 7 V Bottom GS T = 150 °C 300 J ine ) ne ne ine ) ne ne (A 150 T = 125 °C (A J 250 I D 1st li I D V = 6 V 2nd l 2nd li GS 1st li T = 25 °C 2nd l 2nd li J 200 100 100 100 150 V = 5 V GS 100 50 T = - 40 °C J 50 0 10 0 10 2 3 4 5 6 0 0.5 1 1.5 2 2.5 3 V (V) V (V) GS DS Fig. 3 - Typical Transfer Characteristics Fig. 6 - Typical Drain to Source Current Output Characteristics at TJ = 25 °C Revision: 27-Jan-2026
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