VS-HOT200C080 www.vishay.com Vishay Semiconductors SOURCE-DRAIN ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOLTESTCONDITIONSMIN.TYP.MAX.UNITS Diode forward voltage VSD ISD = 200 A, VGS = 0 V - 0.83 1 V Reverse recovery time trr - 106 - ns Reverse recovery charge Qrr I - 7180 - nC SD = 250 A, dI/dt = 2400 A/μs, V Reverse recovery current I R = 52 V RM - 107 - A Reverse recovery energy Erec - 0.3 - mJ Reverse recovery time trr - 100 - ns Reverse recovery charge Qrr T - 6668 - nC J = 125 °C, ISD = 250 A, dI/dt = 2400 A/μs, V Reverse recovery current I R = 52 V RM - 107 - A Reverse recovery energy Erec - 0.263 - mJ INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOLTESTCONDITIONSVALUEUNITS Resistance R25 T = 25 °C 10 000 Ω B-value B25/100 R2 = R25 exp. [B25/100(1/T2 - 1/(298.15K))] 3625 ± 1 % K Operating temperature range at zero power -40 to +150 °C Dissipation factor D 3.0 mW/K Thermal time constant τ < 4 s INTERNAL POWER METAL STRIP RESISTOR - ELECTRICAL SPECIFICATION POWER RATING (W) P70 °CVALUE ( Ω )TOLERANCE (%) 8.0 0.0003 ± 1.0 INTERNAL POWER METAL STRIP RESISTOR - TECHNICAL SPECIFICATION PARAMETERUNITRESISTOR CHARACTERISTICS Component temperature coefficient (including terminal) (1) ppm/K < 35 Operating temperature range °C -65 to 170 Note (1) Component TCR - total TCR that includes the TCR effects of the resistor element and the copper terminal INTERNAL CAPACITORS - ELECTRICAL SPECIFICATIONS PARAMETER SYMBOLVALUETOLERANCE(%)UNITS Capacitance C 68 ± 10 nF Voltage V 100 - V Operating temperature range Top -55 to +150 - °C Revision: 27-Jan-2026 3 Document Number: 97360 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000