SS32, SS33, SS34, SS35, SS36 www.vishay.com Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Low forward voltage drop SMC (DO-214AB) • High surge capability Available • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Cathode Anode • AEC-Q101 qualified available LINKS TO ADDITIONAL RESOURCES - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance D 33A please see www.vishay.com/doc?99912 D Design Tools Related 3D Models Models Application Documents Notes TYPICAL APPLICATIONS For use in low voltage high frequency inverters, Marking freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATAPRIMARY CHARACTERISTICS Case: SMC (DO-214AB) IF(AV) 3.0 A Molding compound meets UL 94 V-0 flammability rating VRRM 20 V, 30 V, 40 V, 50 V, 60 V Base P/N-E3 - RoHS-compliant, commercial grade IFSM 100 A Base P/N-M3 - halogen-free, RoHS-compliant, commercial EAS 20 mJ grade V Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified F 0.5 V, 0.75 V Base P/NHM3_X - halogen-free, RoHS-compliant, and TJ max. 150 °C AEC-Q101 qualified Package SMC (DO-214AB) (“_X” denotes revision code e.g. A, B, ...) Circuit configuration Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS32 SS33 SS34 SS35 SS36 UNIT Device marking code S2 S3 S4 S5 S6 Maximum repetitive peak reverse voltage VRRM 20 30 40 50 60 V Maximum RMS voltage VRMS 14 21 28 35 42 V Maximum DC blocking voltage VDC 20 30 40 50 60 V Maximum average forward rectified current at TL (fig. 1) IF(AV) 3.0 A Peak forward surge current 8.3 ms single half sine-wave I superimposed on rated load FSM 100 A Non-repetitive avalanche energy at TA = 25 °C, E I AS 20 mJ AS = 2.0 A, L = 10 mH Voltage rate of change (rated VR) dV/dt 10 000 V/μs Operating junction temperature range TJ -55 to +150 °C Storage temperature range TSTG -55 to +150 °C Revision: 23-Apr-2020 1 Document Number: 88751 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000