Datasheet SI2310 (Youtai) - 4
| 制造商 | Youtai |
| 描述 | 60V N-ChanneI MOSFET in SOT-23 package |
| 页数 / 页 | 7 / 4 — UMW SI2310A. 6.2Typical Characterisitics |
| 文件格式/大小 | PDF / 226 Kb |
| 文件语言 | 英语 |
UMW SI2310A. 6.2Typical Characterisitics
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UMW SI2310A
60V N-ChanneI MOSFET
6.2Typical Characterisitics
f 14 1000 I D = 3A 12 Ciss oltage (V) V DS= 30 V 10 V DS=38V V DS=48V 8 100 6 C (pF) Coss 4 Crss , Gate to Source V 2 VGS 0 10 0 3 6 9 12 15 1 5 9 13 17 21 25 29 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.000 1 Duty factor=0.5 10.000 ) 0.2 100us thJA 0.1 0.1 0.05 1.000 1ms (A) I P D 0.01 DM 10ms t 0.100 0.01 Single Pulse T Duty factor = t/T 100ms T 1s 0.010 A =25o C Response (R Peak Tj = PDM x Rthja + Ta Rthja = 270°C/W Single Pulse DC Normalized Thermal 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance UTD Semiconductor Co.,Limited 4 of 7 Nov.2024
UMW SI2310A
60V N-ChanneI MOSFET
6.2Typical Characterisitics
f 14 1000 I D = 3A 12 Ciss oltage (V) V DS= 30 V 10 V DS=38V V DS=48V 8 100 6 C (pF) Coss 4 Crss , Gate to Source V 2 VGS 0 10 0 3 6 9 12 15 1 5 9 13 17 21 25 29 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100.000 1 Duty factor=0.5 10.000 ) 0.2 100us thJA 0.1 0.1 0.05 1.000 1ms (A) I P D 0.01 DM 10ms t 0.100 0.01 Single Pulse T Duty factor = t/T 100ms T 1s 0.010 A =25o C Response (R Peak Tj = PDM x Rthja + Ta Rthja = 270°C/W Single Pulse DC Normalized Thermal 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.001 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V) t, Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance UTD Semiconductor Co.,Limited 4 of 7 Nov.2024