Datasheet SI2310 (Youtai) - 3

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UMW SI2310A
60V N-ChanneI MOSFET
6.1Typical Characterisitics
10 10 10V T T A = 150o C 10V A =25o C 7.0V 7.0V 8 5.0V 8 5.0V 4.5V 4.5V 6 6 V V G = 3.0 V G = 3.0 V 4 4 -Drain Current (A) -Drain Current (A) ID 2 ID 2 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 105 2.0 I I D = 2 A 1.8 D = 3 A 99 T V G=10V A =25o C 1.6 RDS(ON) (mΩ) 93 1.4 1.2 RDS(ON) 87 Normalized 1.0 81 0.8 75 0.6 2 4 6 8 10 -50 0 50 100 150 VGS - Gate-to-Source Voltage (V) TJ, Junction Temperature (°C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 1.4 (V) 1.2 2 GS(th) 1.0 T j =150oC T I (A) j =25o C S 0.8 1 Normalized V 0.6 0 0.4 0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150 VSD, Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature UTD Semiconductor Co.,Limited Nov.2024 3 of 7