Datasheet 2N5060, 2N5061, 2N5062, 2N5064 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Sensitive Gate Silicon Controlled Rectifiers 0.8 A RMS in TO-92 package |
| 页数 / 页 | 9 / 2 — 2N5060 Series. THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. … |
| 文件格式/大小 | PDF / 208 Kb |
| 文件语言 | 英语 |
2N5060 Series. THERMAL CHARACTERISTICS. Characteristic. Symbol. Max. Unit. ELECTRICAL CHARACTERISTICS. Min. Typ. OFF CHARACTERISTICS
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2N5060 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
*Thermal Resistance, Junction−to−Case (Note 2) RqJC 75 °C/W Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W 2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3) IDRM, IRRM (VAK = Rated VDRM or VRRM) TC = 25°C − − 10 mA TC = 110°C − − 50 mA
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4) VTM − − 1.7 V (ITM = 1.2 A peak @ TA = 25°C) Gate Trigger Current (Continuous DC) (Note 5) IGT mA *(VAK = 7.0 Vdc, RL = 100 W) TC = 25°C − − 200 TC = −40°C − − 350 Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C VGT − − 0.8 V *(VAK = 7.0 Vdc, RL = 100 W) TC = −40°C − − 1.2 *Gate Non−Trigger Voltage VGD V (VAK = Rated VDRM, RL = 100 W) TC = 110°C 0.1 − − Holding Current (Note 3) TC = 25°C IH − − 5.0 mA *(VAK = 7.0 Vdc, initiating current = 20 mA) TC = −40°C − − 10 Turn-On Time ms Delay Time td − 3.0 − Rise Time tr − 0.2 − (IGT = 1.0 mA, VD = Rated VDRM, Forward Current = 1.0 A, di/dt = 6.0 A/ms Turn-Off Time tq ms (Forward Current = 1.0 A pulse, Pulse Width = 50 ms, 0.1% Duty Cycle, di/dt = 6.0 A/ms, dv/dt = 20 V/ms, IGT = 1 mA) 2N5060, 2N5061 − 10 − 2N5062, 2N5064 − 30 −
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage dv/dt − 30 − V/ms (Rated VDRM, Exponential, RGK = 1 kW) *Indicates JEDEC Registered Data. 3. RGK = 1000 W is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle p 1%. 5. RGK current is not included in measurement.
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2N5060 Series THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
*Thermal Resistance, Junction−to−Case (Note 2) RqJC 75 °C/W Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W 2. This measurement is made with the case mounted “flat side down” on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data.
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current (Note 3) IDRM, IRRM (VAK = Rated VDRM or VRRM) TC = 25°C − − 10 mA TC = 110°C − − 50 mA
ON CHARACTERISTICS
*Peak Forward On−State Voltage (Note 4) VTM − − 1.7 V (ITM = 1.2 A peak @ TA = 25°C) Gate Trigger Current (Continuous DC) (Note 5) IGT mA *(VAK = 7.0 Vdc, RL = 100 W) TC = 25°C − − 200 TC = −40°C − − 350 Gate Trigger Voltage (Continuous DC) (Note 5) TC = 25°C VGT − − 0.8 V *(VAK = 7.0 Vdc, RL = 100 W) TC = −40°C − − 1.2 *Gate Non−Trigger Voltage VGD V (VAK = Rated VDRM, RL = 100 W) TC = 110°C 0.1 − − Holding Current (Note 3) TC = 25°C IH − − 5.0 mA *(VAK = 7.0 Vdc, initiating current = 20 mA) TC = −40°C − − 10 Turn-On Time ms Delay Time td − 3.0 − Rise Time tr − 0.2 − (IGT = 1.0 mA, VD = Rated VDRM, Forward Current = 1.0 A, di/dt = 6.0 A/ms Turn-Off Time tq ms (Forward Current = 1.0 A pulse, Pulse Width = 50 ms, 0.1% Duty Cycle, di/dt = 6.0 A/ms, dv/dt = 20 V/ms, IGT = 1 mA) 2N5060, 2N5061 − 10 − 2N5062, 2N5064 − 30 −
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage dv/dt − 30 − V/ms (Rated VDRM, Exponential, RGK = 1 kW) *Indicates JEDEC Registered Data. 3. RGK = 1000 W is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle p 1%. 5. RGK current is not included in measurement.
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