Datasheet 2N4921G, 2N4922G, 2N4923G (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | 1.0 Ampere General Purpose Power Transistors 40−80 Volts, 30 Watts |
| 页数 / 页 | 7 / 5 — 2N4921G, 2N4922G, 2N4923G. Figure 8. Current Gain. Figure 9. Collector … |
| 文件格式/大小 | PDF / 232 Kb |
| 文件语言 | 英语 |
2N4921G, 2N4922G, 2N4923G. Figure 8. Current Gain. Figure 9. Collector Saturation Region
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2N4921G, 2N4922G, 2N4923G
1000 1.0 TS) 700 VCE = 1.0 V 500 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.8 300 TAGE (VOL GAIN 200 TJ = 150°C 0.6 TJ = 25°C 100 25°C 70 0.4 , DC CURRENT 50 OR-EMITTER VOL -55°C FEh 30 0.2 20 , COLLECT CEV 10 0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Current Gain Figure 9. Collector Saturation Region
108 1.5 I V C = 10 x ICES CE = 30 V TJ = 25°C ANCE (OHMS) 107 1.2 IC = 2 x ICES TS) 106 0.9 IC ≈ ICES VBE(sat) @ IC/IB = 10 105 TAGE (VOL 0.6 VOL V BASE-EMITTER RESIST BE @ VCE = 2.0 V ICES VALUES 104 OBTAINED FROM 0.3 FIGURE 12 VCE(sat) @ IC/IB = 10 , EXTERNAL 103 0 BER 0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance Figure 11. “On” Voltage
104 +2.5 hFE@VCE + 1.0V T C) ° +2.0 103 J = 150°C *APPLIES FOR IC/IB ≤ 2 μ +1.5 (A) +1.0 102 100°C TJ = 100°C to 150°C 25°C +0.5 *qVC FOR VCE(sat) 101 0 OR CURRENT -55°C to +100°C I -0.5 C = ICES 100 VCE = 30 V TURE COEFFICIENTS (mV/ -1.0 , COLLECT -1.5 I C 10-1 qVB FOR VBE -2.0 REVERSE FORWARD TEMPERA 10-2 -2.5 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region Figure 13. Temperature Coefficients www.onsemi.com 5
1000 1.0 TS) 700 VCE = 1.0 V 500 IC = 0.1 A 0.25 A 0.5 A 1.0 A 0.8 300 TAGE (VOL GAIN 200 TJ = 150°C 0.6 TJ = 25°C 100 25°C 70 0.4 , DC CURRENT 50 OR-EMITTER VOL -55°C FEh 30 0.2 20 , COLLECT CEV 10 0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (mA)
Figure 8. Current Gain Figure 9. Collector Saturation Region
108 1.5 I V C = 10 x ICES CE = 30 V TJ = 25°C ANCE (OHMS) 107 1.2 IC = 2 x ICES TS) 106 0.9 IC ≈ ICES VBE(sat) @ IC/IB = 10 105 TAGE (VOL 0.6 VOL V BASE-EMITTER RESIST BE @ VCE = 2.0 V ICES VALUES 104 OBTAINED FROM 0.3 FIGURE 12 VCE(sat) @ IC/IB = 10 , EXTERNAL 103 0 BER 0 30 60 90 120 150 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (mA)
Figure 10. Effects of Base−Emitter Resistance Figure 11. “On” Voltage
104 +2.5 hFE@VCE + 1.0V T C) ° +2.0 103 J = 150°C *APPLIES FOR IC/IB ≤ 2 μ +1.5 (A) +1.0 102 100°C TJ = 100°C to 150°C 25°C +0.5 *qVC FOR VCE(sat) 101 0 OR CURRENT -55°C to +100°C I -0.5 C = ICES 100 VCE = 30 V TURE COEFFICIENTS (mV/ -1.0 , COLLECT -1.5 I C 10-1 qVB FOR VBE -2.0 REVERSE FORWARD TEMPERA 10-2 -2.5 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000 VBE, BASE-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 12. Collector Cut−Off Region Figure 13. Temperature Coefficients www.onsemi.com 5