2N4921G, 2N4922G, 2N4923G 1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 P 0.1 (pk) THERMAL qJC(t) = r(t) qJC q 0.1 JC = 4.16°C/W MAX 0.05 D CURVES APPLY FOR POWER 0.07 ANCE (NORMALIZED) PULSE TRAIN SHOWN 0.05 0.01 t1 , TRANSIENT READ TIME AT t1 t2 r(t) 0.03 T RESIST J(pk) - TC = P(pk) qJC(t) SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.010.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 t, TIME (ms) Figure 4. Thermal Response 10 There are two limitations on the power handling ability of 7.0 a transistor: average junction temperature and second 5.0 100 ms 5.0 ms 1.0 ms breakdown. Safe operating area curves indicate IC − VCE (AMP) 3.0 operation i.e., the transistor must not be subjected to greater 2.0 T dissipation than the curves indicate. J = 150°C dc The data of Figure 5 is based on TJ(pk) = 150_C; TC 1.0 is variable depending on conditions. Second breakdown OR CURRENT 0.7 SECOND BREAKDOWN pulse limits are valid for duty cycles to 10% provided 0.5 LIMITED TJ(pk) ≤ 150_C. At high case temperatures, thermal BONDING WIRE LIMITED 0.3 limitations will reduce the power that can be handled to , COLLECT THERMALLY LIMITED @ TC = 25°C I C 0.2 PULSE CURVES APPLY BELOW values less than the limitations imposed by second RATED V breakdown. CEO 0.11.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Active−Region Safe Operating Area 5.0 5.0 3.0 3.0 IC/IB = 20 IC/IB = 20 2.0 2.0 μ 1.0 1.0 μ TIME (s) 0.7 IC/IB = 10 I 0.7 C/IB = 20 0.5 TIME (s) 0.5 ALL ORAGE 0.3 0.3 I , F C/IB = 10 t f , ST′ 0.2 TJ = 25°C 0.2 TJ = 25°C t s TJ = 150°C TJ = 150°C 0.1 IB1 = IB2 0.1 VCC = 30 V 0.07 ts′ = ts - 1/8 tf 0.07 IB1 = IB2 0.05 0.05 10 20 30 50 70 100 200 300 500 700 1000 10 20 30 50 70 100 200 300 500 700 1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. Storage TimeFigure 7. Fall Timewww.onsemi.com4