Datasheet ATP613 (ON Semiconductor) - 3

ATP613
ID -VDS 6 7V 2 4 6 8 10 12 14 16 18 0 20 4.0
3.5
3.0 Tc=75°C 2.0 25°C 1.5 -25°C 1.0
0.5
2 4 6 8 10 12 5°C 1.0
7
5 Tc= 3
2 -2 75° C 0.1
7
5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 100 tf 5 td (off) 3 tr 2
10
0.1 3 5 7 1.0 25°
C =
V GS 1.5
1.0
0.5
-25 0 25 2 Drain Current, ID -A 3 5 7 10
IT16207 50 75 100 125 150 IT16204 IS -VSD VGS=0V
Single pulse 10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ciss, Coss, Crss -VDS 1.6 IT16206 f=1MHz 5 Ciss 3
2 100 Cos s 7
5
3 Crs s 2 td(on)
2 2.0 7 Ciss, Coss, Crss -pF 3 7 =2.
, ID
V
0
1 1000 VDD=200V
VGS=10V 5 75A 2.5 Diode Forward Voltage, VSD -V SW Time -ID 7 3.0 0.01 5 7 10
IT16205 Drain Current, ID -A
1000 3.5 100
7
5
3
2 3
2
0.01
0.01 12
IT16202 4.0 Case Temperature, Tc -°C Source Current, IS -A C
25° 10 Single pulse 0
-50 VDS=10V 3
2 8 RDS(on) -Tc IT16203 | yfs | -ID 10
7
5 6 4.5 14 15 Gate-to-Source Voltage, VGS -V 4 5.0 0
0 2 Gate-to-Source Voltage, VGS -V ID=2.75A
Single pulse 2.5 0 IT16201 RDS(on) -VGS 4.5 Static Drain-to-Source
On-State Resistance, RDS(on) -Ω 4 °C
25°
C
-25
°C 2 5.0 Forward Transfer Admittance, | yfs | -S 6 Tc=
75 0 Drain-to-Source Voltage, VDS -V Switching Time, SW Time -ns 75°C 2 6V
VGS=5V Static Drain-to-Source
On-State Resistance, RDS(on) -Ω 0 8 C 8V 25°C Tc=
75° 10V
8 4 Tc=
-25
°C 10 Drain Current, ID -A Drain Current, ID -A VDS=20V 15V 10 ID -VGS 12 Tc=25°C -25
°C 12 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -V 45 50 IT16208 No. A1903-3/7