Datasheet ATP613 (ON Semiconductor) - 2

ATP613
Electrical Characteristics at Ta=25°C
Parameter Symbol Ratings Conditions min typ Unit max 500 V(BR)DSS
IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±30V, VDS=0V
VDS=10V, ID=1mA 3 Forward Transfer Admittance | yfs | VDS=10V, ID=2.75A 1.5 Static Drain-to-Source On-State Resistance RDS(on) ID=2.75A, VGS=10V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) 14.2 ns Rise Time tr
td(off) 46 ns 37.6 ns Turn-OFF Delay Time
Fall Time ID=10mA, VGS=0V
VDS=400V, VGS=0V V Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current μA ±100 nA 5
2.9
2.0 Ω 350 pF 68 pF 15 pF VDS=30V, f=1MHz See Fig.2 V
S 1.55 tf
Qg Total Gate Charge 100 20.4 ns 13.8 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=5.5A, VGS=0V 1.1 Reverse Recovery Time trr See Fig.3 60 ns Reverse Recovery Charge Qrr IS=5.5A, VGS=0V, di/dt=100A/μs 120 nC VDS=200V, VGS=10V, ID=5.5A Fig.1 Unclamped Inductive Switching Test Circuit
D
≥50Ω
RG L 10V
0V 10V
0V VIN 1.5 V VDD=200V
ID=2.75A
RL=71Ω VIN
D ATP613 VOUT PW≤10μs
D.C.≤1% VDD 50Ω nC
nC Fig.2 Switching Time Test Circuit G
S 3.2
7.6 G
S
P.G ATP613 50Ω Fig.3 Reverse Recovery Time Test Circuit
ATP613 D
500μH G
S VDD=50V Driver MOSFET Ordering Information
Device
ATP613-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1903-2/7