Datasheet J111, J112 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | JFET Chopper Transistors in TO-92 package |
| 页数 / 页 | 7 / 2 — J111, J112. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. … |
| 文件格式/大小 | PDF / 167 Kb |
| 文件语言 | 英语 |
J111, J112. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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J111, J112 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Gate −Source Breakdown Voltage V(BR)GSS 35 − Vdc (IG = −1.0 mAdc) Gate Reverse Current IGSS − −1.0 nAdc (VGS = −15 Vdc) Gate Source Cutoff Voltage VGS(off) Vdc (VDS = 5.0 Vdc, ID = 1.0 mAdc) J111 −3.0 −10 J112 −1.0 −5.0 Drain−Cutoff Current ID(off) − 1.0 nAdc (VDS = 5.0 Vdc, VGS = −10 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current(1) IDSS mAdc (VDS = 15 Vdc) J111 20 − J112 5.0 − 2.0 − Static Drain−Source On Resistance rDS(on) W (VDS = 0.1 Vdc) J111 − 30 J112 − 50 Drain Gate and Source Gate On−Capacitance Cdg(on) − 28 pF (VDS = VGS = 0, f = 1.0 MHz) + Csg(on) Drain Gate Off−Capacitance Cdg(off) − 5.0 pF (VGS = −10 Vdc, f = 1.0 MHz) Source Gate Off−Capacitance Csg(off) − 5.0 pF (VGS = −10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
ORDERING INFORMATION Device Package Shipping
† J111RL1 TO−92 2000 Units / Tape & Reel J111RL1G TO−92 (Pb−Free) J111RLRA TO−92 2000 Units / Tape & Reel J111RLRAG TO−92 (Pb−Free) J111RLRP TO−92 2000 Units / Tape & Reel J111RLRPG TO−92 (Pb−Free) J112 TO−92 1000 Units / Bulk J112G TO−92 (Pb−Free) J112RL1 TO−92 2000 Units / Tape & Reel J112RL1G TO−92 (Pb−Free) J112RLRA TO−92 2000 Units / Tape & Reel J112RLRAG TO−92 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Gate −Source Breakdown Voltage V(BR)GSS 35 − Vdc (IG = −1.0 mAdc) Gate Reverse Current IGSS − −1.0 nAdc (VGS = −15 Vdc) Gate Source Cutoff Voltage VGS(off) Vdc (VDS = 5.0 Vdc, ID = 1.0 mAdc) J111 −3.0 −10 J112 −1.0 −5.0 Drain−Cutoff Current ID(off) − 1.0 nAdc (VDS = 5.0 Vdc, VGS = −10 Vdc)
ON CHARACTERISTICS
Zero−Gate−Voltage Drain Current(1) IDSS mAdc (VDS = 15 Vdc) J111 20 − J112 5.0 − 2.0 − Static Drain−Source On Resistance rDS(on) W (VDS = 0.1 Vdc) J111 − 30 J112 − 50 Drain Gate and Source Gate On−Capacitance Cdg(on) − 28 pF (VDS = VGS = 0, f = 1.0 MHz) + Csg(on) Drain Gate Off−Capacitance Cdg(off) − 5.0 pF (VGS = −10 Vdc, f = 1.0 MHz) Source Gate Off−Capacitance Csg(off) − 5.0 pF (VGS = −10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 ms, Duty Cycle = 3.0%.
ORDERING INFORMATION Device Package Shipping
† J111RL1 TO−92 2000 Units / Tape & Reel J111RL1G TO−92 (Pb−Free) J111RLRA TO−92 2000 Units / Tape & Reel J111RLRAG TO−92 (Pb−Free) J111RLRP TO−92 2000 Units / Tape & Reel J111RLRPG TO−92 (Pb−Free) J112 TO−92 1000 Units / Bulk J112G TO−92 (Pb−Free) J112RL1 TO−92 2000 Units / Tape & Reel J112RL1G TO−92 (Pb−Free) J112RLRA TO−92 2000 Units / Tape & Reel J112RLRAG TO−92 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
http://onsemi.com 2