Datasheet J111, J112 (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | JFET Chopper Transistors in TO-92 package |
| 页数 / 页 | 7 / 1 — N−Channel — Depletion. Features. http://onsemi.com. MAXIMUM RATINGS. … |
| 文件格式/大小 | PDF / 167 Kb |
| 文件语言 | 英语 |
N−Channel — Depletion. Features. http://onsemi.com. MAXIMUM RATINGS. Rating. Symbol. Value. Unit. TO−92. CASE 29−11. STYLE 5. MARKING DIAGRAM
该数据表的模型线
文件文字版本
link to page 2 J111, J112 JFET Chopper Transistors
N−Channel — Depletion Features
• Pb−Free Packages are Available*
http://onsemi.com
1 DRAIN
MAXIMUM RATINGS Rating Symbol Value Unit
3 Drain −Gate Voltage VDG −35 Vdc GATE Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above = 25°C 2.8 mW/°C Lead Temperature TL 300 °C Operating and Storage Junction TJ, Tstg −65 to +150 °C Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
TO−92
normal operating conditions) and are not valid simultaneously. If these limits are
CASE 29−11
1 exceeded, device functional operation is not implied, damage may occur and
STYLE 5
2 reliability may be affected. 3
MARKING DIAGRAM
J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2 J111/D
N−Channel — Depletion Features
• Pb−Free Packages are Available*
http://onsemi.com
1 DRAIN
MAXIMUM RATINGS Rating Symbol Value Unit
3 Drain −Gate Voltage VDG −35 Vdc GATE Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc 2 SOURCE Total Device Dissipation @ TA = 25°C PD 350 mW Derate above = 25°C 2.8 mW/°C Lead Temperature TL 300 °C Operating and Storage Junction TJ, Tstg −65 to +150 °C Temperature Range Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not
TO−92
normal operating conditions) and are not valid simultaneously. If these limits are
CASE 29−11
1 exceeded, device functional operation is not implied, damage may occur and
STYLE 5
2 reliability may be affected. 3
MARKING DIAGRAM
J11x AYWW G G J11x = Device Code x = 1 or 2 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 2 J111/D