Datasheet DB3, DB4, SMDB3 (STMicroelectronics) - 5
| 制造商 | STMicroelectronics |
| 描述 | DIAC |
| 页数 / 页 | 11 / 5 — DB3, DB4, SMDB3. Characteristics (curves). 1.1. Characteristics curves. … |
| 文件格式/大小 | PDF / 220 Kb |
| 文件语言 | 英语 |
DB3, DB4, SMDB3. Characteristics (curves). 1.1. Characteristics curves. Figure 4. Relative variation of VBO versus junction
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DB3, DB4, SMDB3 Characteristics (curves) 1.1 Characteristics curves Figure 4. Relative variation of VBO versus junction Figure 5. On-state RMS current versus Triac gate current temperature (typical values) pulse duration tp
VBO[Tj] / VBO[Tj=25 °C] ITRM(A) 1.05 10.0 f = 120 Hz DB3 / DB4 DB3 / DB4 T 1.00 j initial = 25°C 0.95 1.0 SMDB3 0.90 SMDB3 0.85 T (°C) j t 0.80 p(µs) 0.1 -40 -20 0 20 40 60 80 100 120 1 10 100
Figure 6. Triac gate current pulse duration tp (to have IP > 50 mA) versus Rs and C values (typical values)
tP(s) 50E-6 68 Ω 40E-6 47 Ω 30E-6 33 Ω 20E-6 22 Ω 10E-6 10 Ω 0 Ω C(F) 00E+0 10E-9 100E-9 1E-6 Note: according to Figure 2. Test circuit
DS2125
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Rev 3 page 5/11
Document Outline 1 Characteristics 1.1 Characteristics curves 2 Package information 2.1 SOT23 package information 2.2 DO-35 package information 3 Ordering information Revision history
VBO[Tj] / VBO[Tj=25 °C] ITRM(A) 1.05 10.0 f = 120 Hz DB3 / DB4 DB3 / DB4 T 1.00 j initial = 25°C 0.95 1.0 SMDB3 0.90 SMDB3 0.85 T (°C) j t 0.80 p(µs) 0.1 -40 -20 0 20 40 60 80 100 120 1 10 100
Figure 6. Triac gate current pulse duration tp (to have IP > 50 mA) versus Rs and C values (typical values)
tP(s) 50E-6 68 Ω 40E-6 47 Ω 30E-6 33 Ω 20E-6 22 Ω 10E-6 10 Ω 0 Ω C(F) 00E+0 10E-9 100E-9 1E-6 Note: according to Figure 2. Test circuit
DS2125
-
Rev 3 page 5/11
Document Outline 1 Characteristics 1.1 Characteristics curves 2 Package information 2.1 SOT23 package information 2.2 DO-35 package information 3 Ordering information Revision history