Datasheet DB3, DB4, SMDB3 (STMicroelectronics) - 2

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DB3, DB4, SMDB3 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), Tj = 25 °C unless otherwise specified Symbol Parameter Value Unit
SMDB3 1.00 A ITRM Repetitive peak on-state current, tp = 20 µs, F = 120 Hz DB3 / DB4 2.00 A Tstg Storage junction temperature range -40 to +125 °C Tj Operating junction temperature range -40 to +125 °C
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified) Symbol Parameter Test conditions SMDB3 DB3 DB4 Unit
Min. 28 28 35 VBO Breakover voltage (1) C = 10 nF (2) Typ. 32 32 40 V Max. 36 36 45 I VBO1 - VBO2 I Breakover voltage symmetry C = 10 nF(2) Max. 3 3 3 V Δ V Dynamic breakover voltage (1) VBO and VF at 10 mA Min. 10 5 5 V VO Output voltage (1) See Figure 2. Test circuit, (R = 20 Ω) Min. 10 5 5 V IBO Breakover current (1) C = 10 nF (2) Max. 10 50 50 µA tr Rise time (1) See Figure 3. Rise time measurement Max. 0.5 2 2 µs IR Leakage current (1) VR = 0.5 x VBO max Max. 1 10 10 µA IP Peak current (1) See Figure 2. Test circuit Min. 1 0.30 0.30 A 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device
DS2125
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Rev 3 page 2/11
Document Outline 1 Characteristics 1.1 Characteristics curves 2 Package information 2.1 SOT23 package information 2.2 DO-35 package information 3 Ordering information Revision history