Datasheet IRF9610 (Vishay) - 3

IRF9610
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) - 2.40 - 2.40 V = - 10, - 9, - 8 V - 7 V GS V = - 10, - 9, - 8, - 7 V GS - 1.92 - 1.92 - 1.44 - 6 V - 1.44 - 6 V ain Current (A) - 0.96 ain Current (A) - 0.96 , Dr , Dr I D - 5 V I D - 5 V - 0.48 - 0.48 80 µs Pulse Test - 4 V 80 µs Pulse Test - 4 V 0.00 0.00 0 - 10 - 20 - 30 - 40 - 50 0 - 2 - 4 - 6 - 8 - 10 91080_01 VDS, Drain-to-Source Voltage (V) 91080_03 VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics Fig. 3 - Typical Saturation Characteristics
- 2.40 102 T = - 55 °C Operation in this area limited J 5 by RDS(on) - 1.92 T = 25 °C J 2 T = 125 °C 10 J - 1.44 5 ain Current (A) 100 µs , Dr 2 ain Current (A) - 0.96 D 1 ms 1 , Dr e I I D - 0.48 5 10 ms T = 25
°
C C 80 µs Pulse Test Negativ 2 T = 150
°
C J V > I x R DS D(on) DS(on) max. Single Pulse 0.00 0.1 2 5 2 5 2 5 0 - 2 - 4 - 6 - 8 - 10 1 10 102 103 91080_02 VGS, Gate-to-Source Voltage (V) 91080_04 Negative VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Transfer Characteristics Fig. 4 - Maximum Safe Operating Area
2.0 ransient T e 1.0 er Unit) ectiv 0.5 D = 0.5 PDM ed Eff 0.2 0.2 maliz 0.1 0.1 t1 0.05 t2 , Nor 0.05 mal Impedence (P Notes: 0.02 thJC 1. Duty Factor, D = t /t Single Pulse (Transient 1 2 0.01 Ther 0.02 2. Per Unit Base = R = 6.4 °C/W Thermal Impedence) thJC (t)/R 3. T - T = P Z (t) JM C DM thJC 0.01 thJCZ 2 5 2 5 2 5 2 5 2 5 2 5 10-5 10-4 10-3 10-2 0.1 1.0 10 91080_05 t1, Square Wave Pulse Duration (s)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
S21-0867-Rev. C, 16-Aug-2021
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