Datasheet PSMN9R0-30YL (Nexperia) - 6
| 制造商 | Nexperia |
| 描述 | N-channel 30 V 8 mΩ logic level MOSFET in LFPAK |
| 页数 / 页 | 14 / 6 — NXP Semiconductors. PSMN9R0-30YL. N-channel 30 V 8 mΩ logic level MOSFET … |
| 修订版 | 10201103 |
| 文件格式/大小 | PDF / 394 Kb |
| 文件语言 | 英语 |
NXP Semiconductors. PSMN9R0-30YL. N-channel 30 V 8 mΩ logic level MOSFET in LFPAK. Table 6. Characteristics. Symbol. Parameter
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NXP Semiconductors PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Table 6. Characteristics
…continued Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.88 1.2 V see Figure 17 trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 26 - ns VDS = 20 V Qr recovered charge - 16 - nC 003aac534 003aac535 80 60 ID I (A) D 4.5 10 (A) 60 3.5 40 40 VGS (V) = 3 2.8 20 20 2.6 Tj = 150 °C 2.4 25 °C 2.2 0 0 0 2 4 6 8 10 0 1 2 3 4 V V GS (V) DS (V)
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values function of gate-source voltage; typical values
003aac539 003aac546 60 14 RDSon g (mΩ) fs VGS (V) = 3.5 (S) 12 50 10 4.5 8 40 7.5 10 6 30 4 5 10 15 20 25 30 0 20 40 ID (A) 60 ID (A)
Fig 7. Forward transconductance as a function of Fig 8. Drain-source on-state resistance as a function drain current; typical values of drain current; typical values
PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
NXP Semiconductors PSMN9R0-30YL N-channel 30 V 8 mΩ logic level MOSFET in LFPAK Table 6. Characteristics
…continued Tested to JEDEC standards where applicable.
Symbol Parameter Conditions Min Typ Max Unit Source-drain diode
VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; - 0.88 1.2 V see Figure 17 trr reverse recovery time IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V; - 26 - ns VDS = 20 V Qr recovered charge - 16 - nC 003aac534 003aac535 80 60 ID I (A) D 4.5 10 (A) 60 3.5 40 40 VGS (V) = 3 2.8 20 20 2.6 Tj = 150 °C 2.4 25 °C 2.2 0 0 0 2 4 6 8 10 0 1 2 3 4 V V GS (V) DS (V)
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values function of gate-source voltage; typical values
003aac539 003aac546 60 14 RDSon g (mΩ) fs VGS (V) = 3.5 (S) 12 50 10 4.5 8 40 7.5 10 6 30 4 5 10 15 20 25 30 0 20 40 ID (A) 60 ID (A)
Fig 7. Forward transconductance as a function of Fig 8. Drain-source on-state resistance as a function drain current; typical values of drain current; typical values
PSMN9R0-30YL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 04 — 9 March 2011 6 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents