Datasheet BC307 (Fairchild)
| 制造商 | Fairchild |
| 描述 | PNP Epitaxial Silicon Transistor in TO-92 Package |
| 页数 / 页 | 5 / 1 — BC307/. 308/. BC307/308/309. 309. Switching and Amplifier Applications. … |
| 文件格式/大小 | PDF / 54 Kb |
| 文件语言 | 英语 |
BC307/. 308/. BC307/308/309. 309. Switching and Amplifier Applications. PNP Epitaxial Silicon Transistor. Absolute Maximum Ratings
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BC307/ 308/ BC307/308/309 309 Switching and Amplifier Applications
• Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage : BC307 -50 V : BC308/309 -30 V VCEO Collector-Emitter Voltage : BC307 -45 V : BC308/309 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002
• Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor Absolute Maximum Ratings
Ta=25°C unless otherwise noted
Symbol Parameter Value Units
VCES Collector-Emitter Voltage : BC307 -50 V : BC308/309 -30 V VCEO Collector-Emitter Voltage : BC307 -45 V : BC308/309 -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002