Datasheet IGB03N120H2 (Infineon) - 8
| 制造商 | Infineon |
| 描述 | HighSpeed 2-Technology for 1200V in PG-TO263-3-2 Package |
| 页数 / 页 | 12 / 8 — Figure 17. Typical gate charge. Figure 18. Typical capacitance as a. … |
| 文件格式/大小 | PDF / 1.2 Mb |
| 文件语言 | 英语 |
Figure 17. Typical gate charge. Figure 18. Typical capacitance as a. Figure 20. Typical turn off behavior, hard
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IGB03N120H2 20V D=0.5 100K/W E E 15V AG 0.2 AG U =240V CE LT LT 0.1 VO VO 0.05 TER TER 10V IT 10-1K/W R , ( K / W ) τ , ( s ) IT M 0.02 1.082517 0.000795 M U =960V -E -E CE 0.328671 0.000179 TE 0.01 TE 0.588811 0.004631 , GA , GA 5V R1 R2 V GE 10-2K/W V GE single pulse C1=τ1/R1 C2=τ2/R2 0V 1µs 10µs 100µs 1ms 10ms 100ms 0nC 10nC 20nC 30nC QGE, GATE CHARGE QGE, GATE CHARGE
Figure 17. Typical gate charge Figure 17. Typical gate charge
(IC = 3A) (IC = 3A) 1nF 1000V 3A E C AG 800V iss LT NT VO E 2A C TER 600V URRE AN 100pF C IT -EMIT APAC 400V CTOR , C Coss CTOR 1A C COLLE 200V , COLLE I CE 10pF Crss V CE 0A 0V 0V 10V 20V 30V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE, COLLECTOR-EMITTER VOLTAGE tp, PULSE WIDTH
Figure 18. Typical capacitance as a Figure 20. Typical turn off behavior, hard function of collector-emitter voltage switching
(VGE = 0V, f = 1MHz) (VGE=15/0V, RG=82Ω, Tj = 150°C, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.4 Oct. 07
Figure 17. Typical gate charge Figure 17. Typical gate charge
(IC = 3A) (IC = 3A) 1nF 1000V 3A E C AG 800V iss LT NT VO E 2A C TER 600V URRE AN 100pF C IT -EMIT APAC 400V CTOR , C Coss CTOR 1A C COLLE 200V , COLLE I CE 10pF Crss V CE 0A 0V 0V 10V 20V 30V 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VCE, COLLECTOR-EMITTER VOLTAGE tp, PULSE WIDTH
Figure 18. Typical capacitance as a Figure 20. Typical turn off behavior, hard function of collector-emitter voltage switching
(VGE = 0V, f = 1MHz) (VGE=15/0V, RG=82Ω, Tj = 150°C, Dynamic test circuit in Figure E) Power Semiconductors 8 Rev. 2.4 Oct. 07