Datasheet CM2400HCB-34N (Mitsubishi Electric) - 4
| 制造商 | Mitsubishi Electric |
| 描述 | 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
| 页数 / 页 | 7 / 4 — MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. … |
| 文件格式/大小 | PDF / 97 Kb |
| 文件语言 | 英语 |
MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. INSULATED TYPE. PERFORMANCE CURVES. OUTPUT CHARACTERISTICS
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MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS (TYPICAL) (TYPICAL)
5000 5000 Tj = 125°C VCE = 20V VGE = 20V 4000 4000 ) VGE = 10V ) ( A VGE = 15V ( A 3000 3000 VGE = 12V 2000 2000 COLLECTOR CURRENT VGE = 8V COLLECTOR CURRENT 1000 1000 Tj = 25°C Tj = 125°C 0 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL)
5000 5000 VGE = 15V 4000 4000 ) ( A ) ( A 3000 3000 2000 2000 EMITTER CURRENT COLLECTOR CURRENT 1000 1000 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C 0 0 0 1 2 3 4 0 1 2 3 4 COLLECTOR-EMITTER SATURATION VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 4
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS (TYPICAL) (TYPICAL)
5000 5000 Tj = 125°C VCE = 20V VGE = 20V 4000 4000 ) VGE = 10V ) ( A VGE = 15V ( A 3000 3000 VGE = 12V 2000 2000 COLLECTOR CURRENT VGE = 8V COLLECTOR CURRENT 1000 1000 Tj = 25°C Tj = 125°C 0 0 0 1 2 3 4 5 6 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION FREE-WHEEL DIODE VOLTAGE CHARACTERISTICS FORWARD CHARACTERISTICS (TYPICAL) (TYPICAL)
5000 5000 VGE = 15V 4000 4000 ) ( A ) ( A 3000 3000 2000 2000 EMITTER CURRENT COLLECTOR CURRENT 1000 1000 Tj = 25°C Tj = 25°C Tj = 125°C Tj = 125°C 0 0 0 1 2 3 4 0 1 2 3 4 COLLECTOR-EMITTER SATURATION VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 4