Datasheet CM2400HCB-34N (Mitsubishi Electric) - 3
| 制造商 | Mitsubishi Electric |
| 描述 | 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
| 页数 / 页 | 7 / 3 — MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. … |
| 文件格式/大小 | PDF / 97 Kb |
| 文件语言 | 英语 |
MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. INSULATED TYPE. THERMAL CHARACTERISTICS
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MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE THERMAL CHARACTERISTICS
Limits Symbol Item Conditions Unit Min Typ Max Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 8.0 K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 12.0 K/kW Rth(c-f) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 6.0 — K/kW
MECHANICAL CHARACTERISTICS
Limits Symbol Item Conditions Unit Min Typ Max Mt M8: Main terminals screw 7.0 — 13.0 N·m Ms Mounting torque M6: Mounting screw 3.0 — 6.0 N·m Mt M4: Auxiliary terminals screw 1.0 — 2.0 N·m m Mass — 1.5 — kg CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm ds Creepage distance 32.0 — — mm LP CE Parasitic stray inductance — 10 — nH RCC’+EE’ Internal lead resistance Tc = 25°C — 0.18 — mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 3
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE THERMAL CHARACTERISTICS
Limits Symbol Item Conditions Unit Min Typ Max Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 8.0 K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 12.0 K/kW Rth(c-f) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 6.0 — K/kW
MECHANICAL CHARACTERISTICS
Limits Symbol Item Conditions Unit Min Typ Max Mt M8: Main terminals screw 7.0 — 13.0 N·m Ms Mounting torque M6: Mounting screw 3.0 — 6.0 N·m Mt M4: Auxiliary terminals screw 1.0 — 2.0 N·m m Mass — 1.5 — kg CTI Comparative tracking index 600 — — — da Clearance 19.5 — — mm ds Creepage distance 32.0 — — mm LP CE Parasitic stray inductance — 10 — nH RCC’+EE’ Internal lead resistance Tc = 25°C — 0.18 — mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 3