Datasheet WM02N50M (Wayon) - 2

WM02N50M Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol Test Condition Min. Typ. Max. Unit Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250µA 20 - - V Gate Leakage Current
IGSS
VGS = ±12V, VDS = 0 V - - ±100 nA Drain Cut-off Current
IDSS
VDS = 20V, VGS = 0 V - - 1 µA Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 250µA 0.45 0.7 1 V VGS = 4.5V, ID =5A - 16 24 Drain-Source On-State Resistance3
RDS(on)
VGS = 2.5V, ID = 4.7A - 21 35 mΩ VGS = 1.8V, ID = 4.3A - 32 57
Dynamic Characteristics
4

Input Capacitance
Ciss
- 700 - VGS = 0V, VDS = 10V, Output Capacitance
Coss
- 120 - pF f = 1MHz Reverse Transfer Capacitance
Crss
- 105 -
Switching Characteristics
4

Total Gate Charge
Qg
- 10.5 - VGS= 4.5V, VDS= 10V, Gate-Source Charge
Qgs
- 2 - nC ID= 5A Gate-Drain Charge
Qgd
- 2.5 - Turn-On Time
td(on)
- 10 - Rise Time
tr
- 20 - VGEN= 5V, VDD = 10V, ns ID = 5A,RG= 3Ω, Turn-Off Time
td(off)
- 32 - Fall Time
tf
- 12 -
Source-Drain Diode Characteristics
Body Diode Voltage3
VSD
IS=4A, VGS = 0V - - 1.2 V Continuous Source Current
IS
- - 5 A
Notes:
1. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. 2. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper, The value in any given application depends on the user's specific board design. 3. Pulse Test: Pulse width≤300μs, duty cycle≤2%. 4. This value is guaranteed by design hence it is not included in the production test. Rev.D,2021 www.way-on.com 2 / 5