Datasheet WM02N50M (Wayon)
| 制造商 | Wayon |
| 描述 | N-Channel Enhancement MOSFET |
| 页数 / 页 | 5 / 1 — WM02N50M. N-Channel Enhancement MOSFET. Features. Mechanical … |
| 文件格式/大小 | PDF / 367 Kb |
| 文件语言 | 英语 |
WM02N50M. N-Channel Enhancement MOSFET. Features. Mechanical Characteristics. Schematic & PIN Configuration. Device symbol
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WM02N50M N-Channel Enhancement MOSFET Features
⚫ Way-on Small Single MOSFETs ⚫ VDS= 20V, ID = 5A RDS(on) <24mΩ @ VGS = 4.5V RDS(on) <35mΩ @ VGS = 2.5V ⚫ Trench LV MOSFET Technology
Mechanical Characteristics
⚫ SOT-23 Package ⚫ Marking : Making Code ⚫ RoHS Compliant
Schematic & PIN Configuration D G D G S S Device symbol SOT-23(Top View) Absolute Maximum Rating (TJ=25°C unless otherwise noted) Parameter Symbol Value Unit
Drain-Source Voltage
VDS
20 V Gate-Source Voltage
VGS
±12 V Continuous Drain Current TA= 25°C
ID
5 A Pulsed Drain Current1
IDM
20 A Power Dissipation TA= 25°C
PD
1.25 W Junction and Storage Temperature Range
TJ, TSTG
-55 to 150 °C
Thermal Characteristics Parameter Symbol Value Unit
Thermal Resistance from Junction to Ambient2
RθJA
100 °C/W Rev.D,2021 Doc:W0803453 1 / 5
⚫ Way-on Small Single MOSFETs ⚫ VDS= 20V, ID = 5A RDS(on) <24mΩ @ VGS = 4.5V RDS(on) <35mΩ @ VGS = 2.5V ⚫ Trench LV MOSFET Technology
Mechanical Characteristics
⚫ SOT-23 Package ⚫ Marking : Making Code ⚫ RoHS Compliant
Schematic & PIN Configuration D G D G S S Device symbol SOT-23(Top View) Absolute Maximum Rating (TJ=25°C unless otherwise noted) Parameter Symbol Value Unit
Drain-Source Voltage
VDS
20 V Gate-Source Voltage
VGS
±12 V Continuous Drain Current TA= 25°C
ID
5 A Pulsed Drain Current1
IDM
20 A Power Dissipation TA= 25°C
PD
1.25 W Junction and Storage Temperature Range
TJ, TSTG
-55 to 150 °C
Thermal Characteristics Parameter Symbol Value Unit
Thermal Resistance from Junction to Ambient2
RθJA
100 °C/W Rev.D,2021 Doc:W0803453 1 / 5