Datasheet J201, SST201 (Vishay) - 2
| 制造商 | Vishay |
| 描述 | N-Channel JFETs |
| 页数 / 页 | 6 / 2 — J/SST201 Series. Vishay Siliconix. Limits. Parameter. Symbol. Test … |
| 文件格式/大小 | PDF / 80 Kb |
| 文件语言 | 英语 |
J/SST201 Series. Vishay Siliconix. Limits. Parameter. Symbol. Test Conditions. Typa. Min. Max. Unit. Static. Dynamic
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J/SST201 Series Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . −40 V Operating Junction Temperature . −55 to 150_C Gate Current . 50 mA Power Dissipationa . 350 mW Lead Temperature (1/16” from case for 10 sec.) . 300_C Notes Storage Temperature . −55 to 150_C a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201 J/SST202 J/SST204c
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static
Gate-Source Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −40 −40 −25 V Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −1.5 −0.8 −4 −0.3 −2 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 0.2 1 0.9 4.5 0.2 3 mA VGS = −20 V, VDS = 0 V −2 −100 −100 −100 pA Gate Reverse Current IGS I S GS TA = 125_C −1 nA Gate Operating Current IG VDG = 10 V, ID = 0.1 mA −2 pA Drain Cutoff Current ID(off) VDS = 15 V, VGS = −5 V 2 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source VDS = 15 V, VGS = 0 V Forward Transconductance gfs f = 1 kHz 0.5 1 0.5 mS Common-Source Input Capacitance Ciss 4.5 VDS = 15 V DS , = 15 V VGS V = 0 V GS pF Common-Source f = 1 MHz Reverse Transfer Capacitance Crss 1.3 Equivalent Input Noise Voltage e VDS = 10 V, VGS = 0 V n f = 1 kHz 6 nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NH b. Pulse test: PW v300 ms duty cycle v3%. c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves. www.vishay.com Document Number: 70233
2
S-40393—Rev. G, 15-Mar-04
ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . −40 V Operating Junction Temperature . −55 to 150_C Gate Current . 50 mA Power Dissipationa . 350 mW Lead Temperature (1/16” from case for 10 sec.) . 300_C Notes Storage Temperature . −55 to 150_C a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST201 J/SST202 J/SST204c
Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit Static
Gate-Source Breakdown Voltage V(BR)GSS IG = −1 mA , VDS = 0 V −40 −40 −25 V Gate-Source Cutoff Voltage VGS(off) VDS = 15 V, ID = 10 nA −0.3 −1.5 −0.8 −4 −0.3 −2 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 0.2 1 0.9 4.5 0.2 3 mA VGS = −20 V, VDS = 0 V −2 −100 −100 −100 pA Gate Reverse Current IGS I S GS TA = 125_C −1 nA Gate Operating Current IG VDG = 10 V, ID = 0.1 mA −2 pA Drain Cutoff Current ID(off) VDS = 15 V, VGS = −5 V 2 Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V 0.7 V
Dynamic
Common-Source VDS = 15 V, VGS = 0 V Forward Transconductance gfs f = 1 kHz 0.5 1 0.5 mS Common-Source Input Capacitance Ciss 4.5 VDS = 15 V DS , = 15 V VGS V = 0 V GS pF Common-Source f = 1 MHz Reverse Transfer Capacitance Crss 1.3 Equivalent Input Noise Voltage e VDS = 10 V, VGS = 0 V n f = 1 kHz 6 nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. NPA, NH b. Pulse test: PW v300 ms duty cycle v3%. c. See 2N/SST5484 Series for J204 and SST204 typical characteristic curves. www.vishay.com Document Number: 70233
2
S-40393—Rev. G, 15-Mar-04