Datasheet IRLB8743PbF (Infineon) - 4
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
Fig 5. Fig 6. Fig 7. Fig 8
该数据表的模型线
文件文字版本
IRLB8743PbF 100000 14.0 VGS = 0V, f = 1 MHZ C I iss = C gs + Cgd, C ds SHORTED D= 32A C ) 12.0 rss = Cgd V V ( DS= 24V C oss = Cds + Cgd e V ) g DS= 15V F a 10.0 t p 10000 l ( o e V c C e n iss c 8.0 a r ti u c o a S p C - 6.0 a oss ot C - , 1000 et C C a rss G 4.0 , SGV 2.0 100 0.0 1 10 100 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA ) T ) LIMITED BY R A J = 175°C DS(on) ( A ( t 100 t n 1000 n er e r rr u u 100µsec C C ni e a c r r 10 1msec D u 100 o e S s - r o e t v - 10msec e ni R a T r , 1 J = 25°C D 10 D , I S I D Tc = 25°C V Tj = 175°C GS = 0V Single Pulse DC 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000 10000 OPERATION IN THIS AREA ) T ) LIMITED BY R A J = 175°C DS(on) ( A ( t 100 t n 1000 n er e r rr u u 100µsec C C ni e a c r r 10 1msec D u 100 o e S s - r o e t v - 10msec e ni R a T r , 1 J = 25°C D 10 D , I S I D Tc = 25°C V Tj = 175°C GS = 0V Single Pulse DC 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 10 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com