Datasheet IRLB8743PbF (Infineon) - 3
| 制造商 | Infineon |
| 描述 | HEXFET Power MOSFET |
| 页数 / 页 | 10 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| 修订版 | 01_01 |
| 文件格式/大小 | PDF / 282 Kb |
| 文件语言 | 英语 |
Fig 1. Fig 2. Fig 3. Fig 4
该数据表的模型线
文件文字版本
IRLB8743PbF 1000 1000 VGS VGS TOP 10V TOP 10V 9.0V 9.0V ) 7.0V ) 7.0V A 5.0V A ( 5.0V t 4.5V t n n 4.5V e 4.0V e r r 4.0V r 3.5V r u u 3.5V C BOTTOM 3.0V C BOTTOM 3.0V e e c c r r 100 100 u u o o S S - - o o t t - - n n i ≤60µs PULSE WIDTH i a a r r 3.0V D Tj = 25°C D , I D I D ≤60µs PULSE WIDTH 3.0V Tj = 175°C 10 10 0.1 1 10 100 0.1 1 10 100 V V DS, Drain-to-Source Voltage (V) DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 T e I J = 25°C cn D = 78A a V ) t GS = 10V A T si ( J = 175°C s t e n R e rr 100 n 1.5 u O C e ) e cr d c e r u z u o il o S- a S- ot mr o - t o - ni N ni 10 ar ( 1.0 a r D D , ) n I D o V ( DS = 15V S D ≤60µs PULSE WIDTH R 1.0 0.5 1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180 T VGS, Gate-to-Source Voltage (V) J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature www.irf.com 3
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 T e I J = 25°C cn D = 78A a V ) t GS = 10V A T si ( J = 175°C s t e n R e rr 100 n 1.5 u O C e ) e cr d c e r u z u o il o S- a S- ot mr o - t o - ni N ni 10 ar ( 1.0 a r D D , ) n I D o V ( DS = 15V S D ≤60µs PULSE WIDTH R 1.0 0.5 1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180 T VGS, Gate-to-Source Voltage (V) J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature www.irf.com 3