Datasheet IRLZ44 (Vishay) - 6
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 6 — IRLZ44. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped … |
| 文件格式/大小 | PDF / 901 Kb |
| 文件语言 | 英语 |
IRLZ44. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped Inductive Waveforms
该数据表的模型线
文件文字版本
IRLZ44
www.vishay.com Vishay Siliconix L VDS V DS t Vary t p p to obtain required I VDD AS R D.U.T. g + V V - DD DS I AS 5.0 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. 50 kΩ QG 5.0 V 12 V 0.2 µF 0.3 µF Q Q + GS GD V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S21-1045-Rev. D, 25-Oct-2021
6
Document Number: 91328 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix L VDS V DS t Vary t p p to obtain required I VDD AS R D.U.T. g + V V - DD DS I AS 5.0 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. 50 kΩ QG 5.0 V 12 V 0.2 µF 0.3 µF Q Q + GS GD V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S21-1045-Rev. D, 25-Oct-2021
6
Document Number: 91328 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000