Philips Semiconductors Product specification N-channel enhancement mode BSN254; BSN254A vertical D-MOS transistor MGU573 MGU574 2 1.25 handbook, halfpage handbook, halfpage k k (1) 1 1.5 (2) 0.75 1 0.5 0.5 0.25 0 0 −50 0 50 100 150 −50 0 50 100 150 T T j (°C) j (°C) R at T k DSon j = --------------------- R at 25 °C DSon V at T k GSth j = -------------------- Typical R V at 25 °C DSon: GSth (1) ID = 250 mA; VGS = 10 V. (2) ID = 20 mA; VGS = 2.4 V. Typical VGSth at 1 mA. Fig.9 Temperature coefficient of drain-source Fig.10 Temperature coefficient of gate-source on-state resistance; typical values. threshold voltage; typical values. 2002 Feb 19 6 Document Outline FEATURES APPLICATIONS DESCRIPTION QUICK REFERENCE DATA PINNING LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT54 variant DATA SHEET STATUS DEFINITIONS DISCLAIMERS