Datasheet UF3C065080B7S (UnitedSiC) - 8

制造商UnitedSiC
描述650V-85mW SiC FET
页数 / 页10 / 8 — 30. 1,000. Ciss. ). 25. ). A(. pF. I. D. (. t,. 20. C. 100. n. ,. Coss. …
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30. 1,000. Ciss. ). 25. ). A(. pF. I. D. (. t,. 20. C. 100. n. ,. Coss. e. e. rr. nc. 15. Cu. ita. 10. n. ac. ai. p. r. D. 10. Ca. Crss. C. 1. D. 5. 0. 0. 0. 100. 200. 300. 400. 500. 600. -75. -50. -25. 0. 25. 50. 75. 100. 125. 150

30 1,000 Ciss ) 25 ) A( pF I D ( t, 20 C 100 n , Coss e e rr nc 15 Cu ita 10 n ac ai p r D 10 Ca Crss C 1 D 5 0 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150

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30 1,000 Ciss ) 25 ) A( pF I D ( t, 20 C 100 n , Coss e e rr nc 15 Cu ita 10 n ac ai p r D 10 Ca Crss C 1 D 5 0 0 0 100 200 300 400 500 600 -75 -50 -25 0 25 50 75 100 125 150 175 Drain-Source Voltage, VDS (V) Case Temperature, TC (°C) Figure 13. Typical capacitances at f = 100kHz and VGS Figure 14. DC drain current derating = 0V 150 1 ) W( /W C ot °( P t , 100 n JC io Z q 0.1 , D = 0.5 at e ip nc D = 0.3 ss a i d D = 0.1 D r 50 D = 0.05 e mpeI 0.01 w l o a D = 0.02 P mre D = 0.01 Th Single Pulse 0 0.001 -75 -50 -25 0 25 50 75 100 125 150 175 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 Case Temperature, TC (°C) Pulse Time, tp (s) Figure 15. Total power dissipation Figure 16. Maximum transient thermal impedance Datasheet: UF3C065080B7S Rev. A, November 2020 8