Datasheet UF3C065080B7S (UnitedSiC) - 4

制造商UnitedSiC
描述650V-85mW SiC FET
页数 / 页10 / 4 — Typical. Performance. -. Dynamic. Value. Parameter. Symbol. Test. …
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Typical. Performance. -. Dynamic. Value. Parameter. Symbol. Test. Conditions. Units. Min. Typ. Max. Input. capacitance. Ciss. 760. V. Output. capacitance. C

Typical Performance - Dynamic Value Parameter Symbol Test Conditions Units Min Typ Max Input capacitance Ciss 760 V Output capacitance C

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Typical Performance - Dynamic Value Parameter Symbol Test Conditions Units Min Typ Max Input capacitance Ciss 760 V Output capacitance C DS=100V, VGS=0V oss 98 pF f=100kHz Reverse transfer capacitance Crss 1 Effective output capacitance, energy V C DS=0V to 400V, oss(er) 71 pF related VGS=0V Effective output capacitance, time V C DS=0V to 400V, oss(tr) 150 pF related VGS=0V COSS stored energy Eoss VDS=400V, VGS=0V 5.7 mJ Total gate charge QG 23 V Gate-drain charge Q DS=400V, ID=20A, GD 5 nC V Gate-source charge Q GS = -5V to 12V GS 11 Turn-on delay time t V d(on) DS=400V, ID=20A, 30 Rise time t Gate Driver =-5V to r 8 +12V, ns Turn-off delay time td(off) 25 Turn-on RG,EXT=8.5W, Fall time tf Turn-off R 7 G,EXT=22W Turn-on energy E Inductive Load, ON 163 FWD: same device with Turn-off energy EOFF 29 mJ VGS = -5V, RG = 22W, Total switching energy ETOTAL T 192 J=25°C Turn-on delay time t V d(on) DS=400V, ID=20A, 27 Rise time t Gate Driver =-5V to r 7 +12V, ns Turn-off delay time td(off) 26 Turn-on RG,EXT=8.5W, Fall time tf Turn-off RG,EXT=22W 6 Turn-on energy E Inductive Load, ON 144 FWD: same device with Turn-off energy EOFF 26 V mJ GS = -5V, RG = 22W, Total switching energy ETOTAL T 170 J=150°C Datasheet: UF3C065080B7S Rev. A, November 2020 4